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Search Results: 1 - 10 of 42458 matches for " 苏仁琼 "
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国内外海水利用发展与趋势对比分析
Analysis of Trend and Development on Seawater Utility in China and Abroad
 [PDF]

柳文华,
Adances in Marine Sciences (AMS) , 2015, DOI: 10.12677/AMS.2015.21001
Abstract:
为了解决淡水资源短缺,海水利用被世界各国考虑。本文详细比较了国内外海水利用现状和存在问题,指出我国海水淡化利用的优势和趋势,为缺水地区利用海水解决水资源短缺提供可能途径和思考。
In order to solve water resources shortage, seawater is considered to be used. In this paper, sea-water utility and technologies were analyzed in the world and problems in seawater desalination were pointed out. The advantages and trend of seawater desalination in China were compared and addressed. The possible approach by seawater desalination was provided to decision makers to solve the water stress in some areas.
我国北方平原井渠结合灌区渠灌需水量的初步探讨

资源科学 , 1983,
Abstract:
宁夏平原水资源的开发利用

资源科学 , 1989,
Abstract: 宁夏平原包括石咀山市、平罗、陶乐、贺兰、银川市、永宁、灵武、吴忠、中宁、中卫、青铜峡市共11个县、市,总土地面积2.05万km~2。 宁夏平原土地资源丰富,黄河纵贯全境,灌溉引、提水方便,是重要的商品粮生产基地。位于宁夏平原的银川、石咀山、青铜峡、中卫、灵武等市、县是宁夏的重要工业城市。
黄土高原地区水资源合理利用

自然资源学报 , 1996, DOI: 10.11849/zrzyxb.1996.01.003
Abstract: ?黄土高原地区自然资源丰富,但生态环境脆弱。区内既有巨大的开发任务,又有严重的环境整治问题,它们都需要大量的供水。该区地处干旱半干旱地区,水资源较贫乏,供需矛盾尖锐。针对地区水资源特征及需水特点,本文提出了水资源开发利用以节水与开发结合,开发利用与保护并重的措施,确保水资源能得到永续利用。
我国北方平原井渠结合灌区渠灌需水量的初步探讨

资源科学 , 1983,
Abstract: 无
一种波束域的高速空中动目标检测及参数估计方法
,
电子学报 , 2014, DOI: 10.3969/j.issn.0372-2112.2014.01.003
Abstract: Keystone变换所需的插值运算存在计算量大的问题,尤其是用于空时自适应处理(Space-TimeAdaptiveProcessing,STAP)时需要对每个阵元接收的数据分别进行Keystone变换,给工程实现带来了困难.为了解决这一问题,提出了一种在波束域进行Keystone变换校正目标距离走动的新方法,该方法将传统的对每个阵元数据的Keystone变换转换为在波束域进行Keystone变换,从而将N个阵元对应的N次Keystone变换转换为只在主波束内进行一次Keystone变换,这样做使算法的主要运算量降低为原来的1/N.然后将压缩感知(CompressedSensing,CS)理论用于空时自适应处理的目标参数估计,取得了良好的估计性能.最后通过仿真实验验证了本文方法的有效性.
2-D analytical modeling of dual material gate fully depleted SOI MOSFET with high-k dielectric
高k介质异质栅全耗尽SOI MOSFET二维解析模型

Luan Su-Zhen,Liu Hong-Xi,Jia Ren-Xu,Cai Nai-Qiong,
,刘红侠,,蔡乃

物理学报 , 2008,
Abstract: A 2-D analytical model for the surface potential and threshold voltage in fully depleted dual-material gate(DMG) SOI MOSFETs with high-k dielectric is developed to investigate the short-channel effects(SCEs). Our model takes into account the effects of the length of the gate metals and their work functions, the applied drain biase,and the gate dielectric constant. We demonstrate that the surface potential in the channel region exhibits a stepped potential variation by the gate near the drain, resulting in suppressed SCEs. With dielectric constants increasing, this novel device shows inverse SCEs. The derived analytical models are in good agreement with the resafts of the two-dimensional device simulator ISE.
The impact of high-k dielectrics on the performance of Schottky barrier source/drain (SBSD) ultra-thin body (UTB) SOI MOSFET
高k栅介质对肖特基源漏超薄体SOI MOSFET性能的影响

Luan Su-Zhen,Liu Hong-Xi,Jia Ren-Xu,Cai Nai-Qiong,Wang Jin,
,刘红侠,,蔡乃,王 瑾

物理学报 , 2008,
Abstract: 研究了高k栅介质对肖特基源漏超薄体SOI MOSFET性能的影响.随着栅介质介电常数增大,肖特基源漏(SBSD) SOI MOSFET的开态电流减小,这表明边缘感应势垒降低效应(FIBL)并不是对势垒产生影响的主要机理.源端附近边缘感应势垒屏蔽效应(FIBS)是SBSD SOI MOSFET开态电流减小的主要原因.同时还发现,源漏与栅是否对准,高k栅介质对器件性能的影响也不相同.如果源漏与栅交叠,高k栅介质与硅衬底之间加入过渡层可以有效地抑制FIBS效应.如果源漏偏离栅,采用高k侧墙并结合堆叠栅结构,可以提高驱动电流.分析结果表明,来自栅极的电力线在介电常数不同的材料界面发生两次折射.根据结构参数的不同可以调节电力线的疏密,从而达到改变势垒高度,调节驱动电流的目的.
An Analytical Model of Drain Current for Ultra-Thin Body and Double-Gate Schottky Source/Drain MOSFETs Accounting for Quantum Effects
考虑量子效应的超薄体双栅肖特基源漏MOSFET电流解析模型

Luan Suzhen,Liu Hongxi,Jia Renxu,Cai Naiqiong,Wang Jin,Kuang Qianwei,
,刘红侠,,蔡乃,王瑾,匡潜玮

半导体学报 , 2008,
Abstract: A compact drain current including the variation of barrier heights and carrier quantization in ultrathin-body and double-gate Schottky barrier MOSFETs (UTBDG SBFETs) is developed.In this model,Schrodinger's equation is solved using the triangular potential well approximation.The carrier density thus obtained is included in the space charge density to obtain quantum carrier confinement effects in the modeling of thin-body devices.Due to the quantum effects,the first subband is higher than the conduction band edge,which is equivalent to the band gap widening.Thus,the barrier heights at the source and drain increase and the carrier concentration decreases as the drain current decreases.The drawback of the existing models,which cannot present an accurate prediction of the drain current because they mainly consider the effects of Schottky barrier lowering (SBL) due to image forces,is eliminated.Our research results suggest that for small nonnegative Schottky barrier (SB) heights,even for zero barrier height,the tunneling current also plays a role in the total on-state currents.Verification of the present model was carried out by the device numerical simulator-Silvaco and showed good agreement.
叶潜蛾科一个新种——黄皮叶潜蛾(鳞翅目:叶潜蛾科)
刘秀,
昆虫学报 , 1985,
Abstract:
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