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Modeling chaotic current oscillations in semi-insulating GaAs with rate-equations of impact ionization and field-enhanced trapping
Albuquerque, H. A.;Silva, R. L. da;Rubinger, R. M.;Oliveira, A. G. de;Ribeiro, G. M.;Rodrigues, W. N.;
Brazilian Journal of Physics , 2006, DOI: 10.1590/S0103-97332006000300003
Abstract: we investigated the effect of adding the field-dependent recombination process, namely field-enhanced trapping, to the generation-recombination processes of charge carriers that model current oscillations in semiconductors. the main new features arising from this modification are identified in bifurcation diagrams with the electric field as the control parameter. the characteristic of the bifurcation diagrams is a function of impurity energy. thus, we generated a set of bifurcation diagrams for a range of the impurity energy and applied bias. the energy dependence of the bifurcation diagrams is discussed considering the context of the competition between the generation-recombination mechanisms impact ionization and field-enhanced trapping.
Low frequency oscillations and bifurcation diagram in semi-insulating GaAs samples
Silva, R. L. da;Albuquerque, H. A.;Rubinger, R. M.;Oliveira, A. G. de;Ribeiro, G. M.;Rodrigues, W. N.;
Brazilian Journal of Physics , 2006, DOI: 10.1590/S0103-97332006000300006
Abstract: we present an experimental study of bifurcation diagrams from low frequency current oscillations (lfo) measurements obtained from semi-insulating gaas samples grown by low temperature molecular beam epitaxy (lt-mbe). the considered growth temperatures were 215oc and 265oc. lfo are considered to be spontaneously generated oscillations under constant applied bias v. these oscillations were measurement and recorded in the form of time series. the bifurcation diagrams were obtained from the sequence of minima as a function of the applied bias. the standard measurement procedure was described elsewhere. as the control parameter, the bias allows the identification of a bifurcation route to chaos.
Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample
Viana, Emilson Ribeiro;Ribeiro, Geraldo Mathias;Oliveira, Alfredo Gontijo de;Peres, Marcelos Lima;Rubinger, Rero Marques;Rubinger, Carla Patrícia Lacerda;
Materials Research , 2012, DOI: 10.1590/S1516-14392012005000065
Abstract: magnetoresistance measurements were performed on an illuminated semi-insulating gaas sample with intrinsic deep level defects. electrical carriers were photo-generated under light excitation and positive magnetoresistance for b < 0.2 t was observed in the whole range of temperatures measured (220-315 k). using the model developed by h. fukuyama and k. hoshino, we interpreted the positive magnetoresistance as mainly caused by weak antilocalization effects over hole carriers for t > 240 k. the high disorder originated from the low temperature growth of the sample leads to the strong localization of carriers and gives rise to the positive magnetoresistance observed at temperatures as high as room temperature.
Experimental observation of spontaneous chaotic current oscillations in GaAs/Al0.45Ga0.55As superlattices at room temperature
YuYang Huang,Wen Li,WenQuan Ma,Hua Qin,YaoHui Zhang
Chinese Science Bulletin , 2012, DOI: 10.1007/s11434-012-5198-8
Abstract: Spontaneous self-sustained chaotic current oscillations are observed experimentally in lightly-doped weakly-coupled GaAs/Al0.45Ga0.55As superlattices at room temperature for the first time. The mole fraction of Aluminum in the barrier is chosen to be 0.45 to suppress the thermal carrier leakage through the X-band valley. The effective nonlinearity induced by the sequential well-to-well resonant tunneling can still be strong enough to induce spontaneous chaotic current oscillations even at room temperature. The frequency spectrum of the chaotic current oscillations is ranged from DC to 4 GHz, which can be used as ultra-wide-band noise sources with a bandwidth of several Giga Hertz.
High Resolution Parameter Space from a Two Level Model on Semi-Insulating GaAs  [PDF]
S. L. da Silva,E. R. Viana,A. G. de Oliveira,G. M. Ribeiro,R. L. da Silva
Physics , 2014, DOI: 10.1142/S0218127415300049
Abstract: Semi-insulating Gallium Arsenide (SI-GaAs) samples experimentally show, under high electric fields and even at room temperature, negative differential conductivity in N-shaped form (NNDC). Since the most consolidated model for n-GaAs, namely, "the model", proposed by E. Scholl was not capable to generate the NNDC curve for SI-GaAs, in this work we proposed an alternative model. The model proposed, "the two-valley model" is based on the minimal set of generation recombination equations for two valleys inside of the conduction band, and an equation for the drift velocity as a function of the applied electric field, that covers the physical properties of the nonlinear electrical conduction of the SI-GaAs system. The "two valley model" was capable to generate theoretically the NNDC region for the first time, and with that, we were able to build a high resolution parameter-space of the periodicity (PSP) using a Periodicity-Detection (PD) routine. In the parameter space were observed self-organized periodic structures immersed in chaotic regions. The complex regions are presented in a "shrimp" shape rotated around a focal point, which forms in large-scale a "snail shell" shape, with intricate connections between different "shrimps". The knowledge of detailed information on parameter spaces is crucial to localize wide regions of smooth and continuous chaos.
Physical mechanism of two-photon response in semi-insulating GaAs
LIU Xiu-Huan,CHEN Zhan-Guo,JIA Gang,SHI Bao,

中国物理快报 , 2008,
Abstract: The physical mechanism of two-photon response (TPR) in semi-insulating GaAs is studied. The measured photocurrent generated from the fabricated hemispherical GaAs sample responding to 1.3μm continuous wave laser shows a quadratic dependence on the coupled optical power and no saturation with the bias. The angular dependence of the photocurrent on the azimuth is in agreement with the anisotropy of double-frequency absorption (DFA) in GaAs single crystals. These results demonstrate DFA is the dominant mechanism of TPR in GaAs.
Transient thermal effect of semi-insulating GaAs photoconductive switch

Shi Wei,Ma Xiang-Rong,Xue Hong,

物理学报 , 2010,
Abstract: Results of experiments of the 4 mm gap semi-insulating(SI) GaAs photoconductive switch triggered by 1064 nm, 1.0 mJ pulse laser showed the nonlinear mode when the bias field was 3800 V. Under the same bias electric field and trigger light energy conditions, the switch outputs stably nonlinear electrical pulses, and the switch surface injury mark is caused by filamentation after 1500 times triggering. Analysis shows that under given conditions of trigger energy and electric field, two transient thermal effects occur in the switch chip, namely the thermal relaxation and photoactivated charge domain-phonon drag, respectively. Thermal relaxation time is shortened to the order of picoseconds or subpicoseconds, thermal relaxation process leads to the thermal conduction relaxation. When photoactivated charge domain moves at 107cm/s speed from cathode to anode, switch chip transient temperature makes relaxation oscillations owing to these effects, and the rapid increase of temperature in the chip is constrained. Photoactivated charge domain-phonon drag effect transmits in the direction of the dislocation movement, the temperature in mobile region increases when the flow of thermal energy carried by the phonons was concentrated in the movement plane, the injury of filamentation is produced by superposition and cumulation of mobile tracks.
Observation of Metastable and Stable Energy Levels of EL2 in Semi-insulating GaAs  [PDF]
D. Kabiraj,Subhasis Ghosh
Physics , 2005, DOI: 10.1063/1.2150579
Abstract: By using combination of detailed experimental studies, we identify the metastable and stable energy levels of EL2 in semi-insulating GaAs. These results are discussed in the light of the recently proposed models for stable and metastable configurations of EL2 in GaAs.
Analysis of Trapping and Detrapping in Semi-Insulating GaAs Detectors  [PDF]
M. Rogalla,Th. Eich,N. Evans,R. Geppert,R. Goeppert,R. Irsigler,J. Ludwig,K. Runge,Th. Schmid,D. G. Marder
Physics , 1997, DOI: 10.1016/S0168-9002(97)00632-3
Abstract: To investigate the trapping and detrapping in SI-GaAs particle detectors we analyzed the signals caused by 5.48 MeV alpha particles with a charge sensitive preamplifier. From the bias and temperature dependence of these signals we determine the activation energies of two electron traps. Additional simulation and measurements of the lifetime as a function of resistivity have shown that the EL2+ is the dominant electron trap in semi-insulating GaAs.
Measurement of spin diffusion in semi-insulating GaAs  [PDF]
C. P. Weber,Craig A. Benko,Stanley C. Hiew
Physics , 2011, DOI: 10.1063/1.3592272
Abstract: We use optical transient-grating spectroscopy to measure spin diffusion of optically oriented electrons in bulk, semi-insulating GaAs(100). Trapping and recombination do not quickly deplete the photoexcited population. The spin diffusion coefficient of 88 +/- 12 cm2/s is roughly constant at temperatures from 15 K to 150 K, and the spin diffusion length is at least 450 nm. We show that it is possible to use spin diffusion to estimate the electron diffusion coefficient. Due to electron-electron interactions, the electron diffusion is 1.4 times larger than the spin diffusion.
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