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The Amorphous-Crystal Interface in Silicon: a Tight-Binding Simulation  [PDF]
N. Bernstein,M. J. Aziz,E. Kaxiras
Physics , 1998, DOI: 10.1103/PhysRevB.58.4579
Abstract: The structural features of the interface between the cystalline and amorphous phases of Si solid are studied in simulations based on a combination of empirical interatomic potentials and a nonorthogonal tight-binding model. The tight-binding Hamiltonian was created and tested for the types of structures and distortions anticipated to occur at this interface. The simulations indicate the presence of a number of interesting features near the interface. The features that may lead to crystallization upon heating include <110> chains with some defects, most prominently dimers similar to those on the Si(001) 2x1 reconstructed free surface. Within the amorphous region order is lost over very short distances. By examining six different samples with two interfaces each, we find the energy of the amorphous-crystal interface to be 0.49 +/- 0.05 J/m^2
Tight-binding study of structure and vibrations of amorphous silicon  [PDF]
J. L. Feldman,N. Bernstein,D. A. Papaconstantopoulos,M. J. Mehl
Physics , 2004, DOI: 10.1103/PhysRevB.70.165201
Abstract: We present a tight-binding calculation that, for the first time, accurately describes the structural, vibrational and elastic properties of amorphous silicon. We compute the interatomic force constants and find an unphysical feature of the Stillinger-Weber empirical potential that correlates with a much noted error in the radial distribution function associated with that potential. We also find that the intrinsic first peak of the radial distribution function is asymmetric, contrary to usual assumptions made in the analysis of diffraction data. We use our results for the normal mode frequencies and polarization vectors to obtain the zero-point broadening effect on the radial distribution function, enabling us to directly compare theory and a high resolution x-ray diffraction experiment.
Structural and Dynamic Properties of Amorphous Silicon: Tight-Binding Molecular Dynamics Simulation
Structural and Dynamic Properties of Amorphous Silicon: Tight-Binding Molecular Dynamics Simulation

HUANG Shi-Ping,WANG Wen-Chuan,

中国物理快报 , 2004,
Abstract: The tight-binding molecular dynamics simulation has been performed to study structural and dynamical properties of amorphous silicon. It is found that the radial distribution function and static structure factor are in good agreement with the experimental measurements. The bond order parameters Ql are sensitive to the structure change at different quenching rates. For the dynamical properties, we have calculated the vibration and electronic density of states. The simulation results show that the transverse acoustic is in good agreement with the experimental data, and the high frequency transverse optical (TO) peak shifts to the right of the experimental TO peak.
Tight-binding calculation of growth mechanism of graphene on Ni(111) surface  [PDF]
Zhou Chen,Hu Jing,Tian Yuan,Zhao Qianying,Miao Ling,Jiang Jianjun
Physics , 2012,
Abstract: The nucleation of graphene on Ni surface, as well as on the step, is studied using a tight binding method of SCC-DFTB. The result demonstrates that the fcc configuration has the lowest total energy and thus is the most stable one compared to the other two structures when benzene ring is absorbed on the Ni(111) surface. The activity of marginal growth graphene's carbon atoms decreases from the boundary to the center, when they are absorbed on the substrate. Graphene layer can grow continuously on step surface formed by intersection of Ni(111) and Ni(1-11) surface. Meanwhile, a mismatch will occur between the layer and Ni surface and thus leads to flaws when the layer grows larger. Reducing the mismatch between the graphene and the step surface will benefit the growth of graphene of large area and high quality.
Vibrational properties of amorphous silicon from tight-binding O(N) calculation  [PDF]
Parthapratim Biswas
Physics , 2001, DOI: 10.1103/PhysRevB.65.125208
Abstract: We present an O(N) algorithm to study the vibrational properties of amorphous silicon within the framework of tight-binding approach. The dynamical matrix elements have been evaluated numerically in the harmonic approximation exploiting the short-range nature of the density matrix to calculate the vibrational density of states which is then compared with the same obtained from a standard O($N^4$) algorithm. For the purpose of illustration, an 1000-atom model is studied to calculate the localization properties of the vibrational eigenstates using the participation numbers calculation.
Electronic States in One, Two, and Three Dimensional Highly Amorphous Materials: A Tight Binding Treatment  [PDF]
D. J. Priour Jr
Physics , 2010, DOI: 10.1103/PhysRevB.85.014209
Abstract: In a tight binding framework, we analyze the characteristics of electronic states in strongly disordered materials (hopping sites are placed randomly with no local order) with tunneling matrix elements decaying exponentially in the atomic separation with various decay ranges l examined. We calculate the density of states (DOS) and the Inverse Participation Ratio (IPR) for amorphous atomic configurations in one, two, and three dimensions. With a finite size scaling analysis of the IPR statistical distributions, it is shown that states are either extended or localized for a particular energy, and phase portraits for wave functions are obtained showing extended and localized behavior in the thermodynamic limit. While we conclude that all states are localized in 1D, in the 2D case there is a threshold for l above which some eigenstates appear to be extended and below which wave functions are entirely localized. For 3D geometries, there are two mobility boundaries flanking an intermediate range of energies where states are extended with eigenstates localized for energies above or below this range. While a zone of extended states persists even for very short l, the width of the region tends to zero exponentially (i.e. scaling as exp{-A/l}) for very small decay length scales.
Insights into the fracture mechanisms and strength of amorphous and nanocomposite carbon  [PDF]
Maria G. Fyta,Ioannis N. Remediakis,Pantelis C. Kelires,Dimitrios A. Papaconstantopoulos
Physics , 2006, DOI: 10.1103/PhysRevLett.96.185503
Abstract: Tight-binding molecular dynamics simulations shed light into the fracture mechanisms and the ideal strength of tetrahedral amorphous carbon and of nanocomposite carbon containing diamond crystallites, two of the hardest materials. It is found that fracture in the nanocomposites, under tensile or shear load, occurs inter-grain and so their ideal strength is similar to the pure amorphous phase. The onset of fracture takes place at weakly bonded sp^3 sites in the amorphous matrix. On the other hand, the nanodiamond inclusions significantly enhance the elastic moduli, which approach those of diamond.
A Molecular Dynamics Study of Carbon Dimerization on Cu(111) Surface with Optimized DFTB Parameters

- , 2018, DOI: 10.3866/PKU.WHXB201801151
Abstract: 针对铜表面化学反应,我们发展了一套铜-碳体系的密度泛函紧束缚(DFTB)参数。测试结果表明这套参数可以很好的描述吸附铜或碳原子前后铜表面的几何结构和能量。基于这套参数,我们对Cu(111)表面的碳二聚化过程进行了分子模拟研究。即使在高温下,直接的分子动力学模拟也很难观察到碳二聚体的形成。这是因为高温下铜表面显著的结构弛豫一定程度上阻止了二聚化。为了研究高温下铜表面碳二聚化的机理,我们进行了赝动力学模拟。发现在二聚化的过程中,碳原子形成C-Cu-C桥状结构以后,会绕中间Cu原子转动,最后形成碳二聚体。1300 K下碳二聚化的自由能垒约0.9 eV。
Cu has been widely used as a substrate material for graphene growth. To understand the atomistic mechanism of growth, an efficient and accurate method for describing Cu-C interactions is necessary, which is the prerequisite of any possible large-scale molecular simulation studies. The semi-empirical density-functional tight-binding (DFTB) method has a solid basis from the density functional theory (DFT) and is believed to be a good tool for achieving a balance between efficiency and accuracy. However, existing DFTB parameters cannot provide a reasonable description of the Cu surface structure. At the same time, DFTB parameters for Cu-C interactions are not available. Therefore, it is highly desirable to develop a set of DFTB parameters that can describe the Cu-C system, especially for surface reactions. In this study, a parametrization for Cu-C systems within the self-consistent-charge DFTB (SCC-DFTB) framework is performed. One-center parameters, including on-site energy, Hubbard, and spin parameters, are obtained from DFT calculations on free atoms. Two-center parameters can be calculated based on atomic wavefunctions. The remaining repulsive potential is obtained as the best compromise to describe different kinds of systems. Test calculations on Cu surfaces and Cu-or C atom-adsorbed Cu surfaces indicate that the obtained parameters can generate reasonable geometric structures and energetics. Based on this parameter set, carbon dimerization on the Cu(111) surface has been investigated via molecular dynamics simulations. Since they are the feeding species for graphene growth, it is important to understand how carbon dimers are formed on the Cu surface. It is difficult to observe carbon dimerization in brute-force MD simulations even at high temperatures, because of the surface structure distortion. To study the dimerization mechanism, metadynamics simulations are performed. Our simulations suggest that carbon atoms will rotate around the bridging Cu atom after a bridging metal structure is formed, which eventually leads to the dimer formation. The free energy barrier for dimerization at 1300 K is about 0.9 eV. The results presented here provide useful insights for understanding graphene growth
A new type of charged defect in amorphous chalcogenides  [PDF]
S. I. Simdyankin,T. A. Niehaus,G. Natarajan,Th. Frauenheim,S. R. Elliott
Physics , 2004, DOI: 10.1103/PhysRevLett.94.086401
Abstract: We report on density-functional-based tight-binding (DFTB) simulations of a series of amorphous arsenic sulfide models. In addition to the charged coordination defects previously proposed to exist in chalcogenide glasses, a novel defect pair, [As4]--[S3]+, consisting of a four-fold coordinated arsenic site in a seesaw configuration and a three-fold coordinated sulfur site in a planar trigonal configuration, was found in several models. The valence-alternation pairs S3+-S1- are converted into [As4]--[S3]+ pairs under HOMO-to-LUMO electronic excitation. This structural transformation is accompanied by a decrease in the size of the HOMO-LUMO band gap, which suggests that such transformations could contribute to photo-darkening in these materials.
Thermal Transport for Many Body Tight-Binding Models  [PDF]
Indranil Paul,Gabriel Kotliar
Physics , 2002, DOI: 10.1103/PhysRevB.67.115131
Abstract: We clarify some aspects of the calculation of the thermal transport coefficients. For a tight-binding Hamiltonian we discuss the approximate nature of the charge current and the thermal current obtained by Peierls substitution which is also identical to the equation of motion technique. We address the issue of choosing an appropriate basis for making the Peierls construction for transport calculations. We propose a criteria for finding an optimum Wannier basis where the difference between the exact current and the approximate one is minimum. Using the equations of motion we derive the thermal current for a generalized Hubbard model with density interaction. We identify a part which is the contribution from the long range interactions to the heat current. For the Hubbard model we derive expressions for the transport coefficients in the limit of infinite dimensions.
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