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Trench gate IGBT structure with floating P region
具有P型浮空区的槽栅IGBT结构

Qian Mengliang,Li Zehong,Zhang Bo,Li Zhaoji,
钱梦亮
,李泽宏,张波,李肇基

半导体学报 , 2010,
Abstract: A new trench gate IGBT structure with a floating P region is proposed, which introduces a floating P region into the trench accumulation layer controlled IGBT (TAC-IGBT). The new structure maintains a low on-state voltage drop and large forward biased safe operating area (FBSOA) of the TAC-IGBT structure while reduces the leakage current and improves the breakdown voltage. In addition, it enlarges the short circuit safe operating area (SCSOA) of the TAC-IGBT, and is simple in fabrication and design. Simulation results indicate that, for IGBT structures with a breakdown voltage of 1200 V, the leakage current of the new trench gate IGBT structure is one order of magnitude lower than the TAC-IGBT structure and the breakdown voltage is 150 V higher than the TAC-IGBT.
Insulated gate bipolar transistor with trench gate structure of accumulation channel
具有积累层沟道的槽栅IGBT结构

Qian Mengliang,Li Zehong,Zhang Bo,Li Zhaoji,
钱梦亮
,李泽宏,张波,李肇基

半导体学报 , 2010,
Abstract: An accumulation channel trench gate insulated gate bipolar transistor (ACT-IGBT) is proposed. The simulation results show that for a blocking capability of 1200 V, the on-state voltage drops of ACT-IGBT are 1.5 and 2 V at a temperature of 300 and 400 K, respectively, at a collector current density of 100 A/cm2. In contrast, the on-state voltage drops of a conventional trench gate IGBT (CT-IGBT) are 1.7 and 2.4 V at a temperature of 300 and 400 K, respectively. Compared to the CT-IGBT, the ACT-IGBT has a lower on-state voltage drop and a larger forward bias safe operating area. Meanwhile, the forward blocking characteristics and turn-off performance of the ACT-IGBT are also analyzed.
A New Small-Signal Modeling and Extraction Method in AlGaN/GaN HEMTs
一种新的AlGaN/GaN HEMT小信号模型与提参方法

Lu Jing,Wang Yan,Ma Long,Yu Zhiping,
鲁净
,王燕,祃龙,余志平

半导体学报 , 2007,
Abstract: 为得到GaN HEMT器件的小信号等效电路,在传统的GaAs HEMT小信号模型的基础上引入了反应栅漏电流的反馈电阻RIgs,RIgd,并在此基础上引入分布式设计对小信号等效电路模型进一步改进,建立了19元件(20参数)的小信号等效电路拓扑结构.根据此模型提供了一套稳定的直接提参方法,结果表明新的模型系统具有简单、适应频率、偏压范围广、稳定性好和精度高等特点.相比于传统的集总模型能适应更高的频率范围,对器件品质和测量环境要求不高,有更强的稳定性.
A novel TFS-IGBT with a super junction floating layer
一种带有超结浮空层的槽栅场阻IGBT

Ye Jun,Fu Daping,Luo Bo,Zhao Yuanyuan,Qiao Ming,Zhang Bo,
叶俊
,傅达平,罗波,赵远远,乔明,张波

半导体学报 , 2010,
Abstract: A novel trench field stop (TFS) IGBT with a super junction (SJ) floating layer (SJ TFS-IGBT) is proposed. This IGBT presents a high blocking voltage (> 1200 V), low on-state voltage drop and fast turn-off capability. A SJ floating layer with a high doping concentration introduces a new electric field peak at the anode side and optimizes carrier distribution, which will improve the breakdown voltage in the off-state and decrease the energy loss in the on-state/switching state for the SJ TFS-IGBT. A low on-state voltage (VF) and a high breakdown voltage (BV) can be achieved by increasing the thickness of the SJ floating layer under the condition of exact charge balance. A low turn-off loss can be achieved by decreasing the concentration of the P-anode. Simulation results show that the BV is enhanced by 100 V, VF is decreased by 0.33 V (at 100 A/cm2) and the turn-off time is shortened by 60%, compared with conventional TFS-IGBTs.
还阳参醇提物止咳祛痰平喘及抗炎作用的实验研究  [PDF]
彭照琪,岳永花,李小贝,贺石麟,倪艳
药物评价研究 , 2012,
Abstract: 目的 探讨还阳参醇提物对实验动物的止咳、祛痰、平喘及抗炎作用。方法 分别采用氨水引咳法、气管酚红排泄法、组织胺致喘息法观察还阳参醇提物的止咳、祛痰、平喘作用;采用二甲苯致小鼠耳肿胀和蛋清致大鼠足趾肿胀法观察还阳参醇提物抗急性炎症的作用;气管内注入脂多糖法建立大鼠慢性支气管炎模型,观察受试物对模型大鼠肺组织的病理学改变。结果 还阳参醇提物能显著减少小鼠的咳嗽次数、增加小鼠气道酚红排泄量、延长组织胺所致豚鼠喘息的潜伏期、可减轻蛋清所致的大鼠足趾肿胀度,与对照组比较差异具有显著性(P<0.05或0.01);还阳参醇提物能减轻慢性支气管炎大鼠黏膜上皮细胞的坏死和脱落,抑制黏膜层和黏膜下层炎性细胞浸润。结论 还阳参醇提物有明确的止咳、祛痰、平喘及抗炎作用,对慢性支气管炎大鼠模型的支气管黏膜有保护作用。
IGBT电压击穿特性分析  [PDF]
汪波,胡安,唐勇,陈明
电工技术学报 , 2011,
Abstract: 针对绝缘栅双极晶体管(IGBT)应用选型中长期以来采用经验的粗放式设计方法,本文基于IGBT结构和PN结雪崩击穿原理,分析了场终止型IGBT雪崩击穿电压的计算公式和测量方法。由于线路和器件内部分布电感的存在,开关时会产生一个电压尖峰,分析了IGBT过电压击穿特性和电压尖峰的抑制方法。针对通常认为一旦发生过电压击穿就会损坏器件的错误认识,分析了IGBT过电压击穿失效机理和失效模式,发现过电压击穿失效本质是由于热量累积引起结温上升的热击穿失效,失效模式初始表现为短路最终表现为开路,最后实验验证了IGBT具有可承受短时过电压击穿的能力。
两种沉水植物浸提液对斜生栅藻的化感效应  [PDF]
农业环境科学学报 , 2008,
Abstract: 采用玻璃水族箱及恒温光照培养箱,分别研究了两种沉水植物伊乐藻(Elodeacanadensis)和蓖齿眼子菜(PotamogetonpectinatusL.)的浸提液对斜生栅藻(Scenedesmusobliquus)的化感效应。结果显示,这两种沉水植物的浸提液均对斜生栅藻的生长具有化感效应,且都表现为“低促高抑”的现象。伊乐藻和蓖齿眼子菜20%浸提液试验组对斜生栅藻有明显的促生长效应,试验第7d时,其藻细胞浓度分别为同期对照组的237%和180%。伊乐藻和篦齿眼子菜50%~90%浸提液试验组对斜生栅藻的生长有不同程度地抑制,且抑制作用随着浸提液浓度的增加而逐渐增强。试验第7d时,伊乐藻和蓖齿眼子菜90%浸提液试验组藻细胞浓度分别为同期对照组的38%和32%。从对藻类生长的抑制效果上看,伊乐藻浸提液对斜生栅藻的EC50(6d)为70%,篦齿眼子菜浸提液对斜生栅藻的EC50(6d)为55%,表明了眼子菜浸提液对斜生栅藻的抑制效果较伊乐藻浸提液好。
适用于复杂电路分析的IGBT模型  [PDF]
邓夷,赵争鸣,袁立强,胡斯登,王雪松
中国电机工程学报 , 2010,
Abstract: 推出一种适用于复杂电路仿真分析的绝缘栅双极性晶体管(insulatedgatebipolartransistor,IGBT)模型。模型分阶段模拟IGBT的开关瞬态过程,并采用曲线拟合的方式实现对IGBT稳态特性的建模。模型具有计算速度快、参数提取容易、物理概念明确的特点。描述模型的等效原理、构成和参数提取过程,并在PSIM软件包下建立其等效电路。以FF300R12ME3型IGBT为例给出了模型参数,并将模型应用于IGBT的开关特性分析、缓冲吸收电路设计以及IGBT的并联运行分析。仿真和实验结果对比证明了该模型的有效性。
A novel high speed lateral IGBT with a self-driven second gate
一种新型的快速关断绝缘栅双极晶体管

Hu Hao,Chen Xingbi,
胡浩
,陈星弼

半导体学报 , 2012,
Abstract: A novel lateral IGBT with a second gate on the emitter portion is presented. A PMOS transistor, driven by the proposed device itself, is used to short the PN junction at the emitter while turned off. Low on state voltage and fast turn off speed are obtained without side-effects such as snapback I-V characteristics and difficulties of process complexity. Numerical simulation results show a drop of fall time from 120 to 12 ns and no increase of on state voltage.
大功率IGBT串联电压不平衡机制研究  [PDF]
庞辉,温家良,贺之渊,汤广福
中国电机工程学报 , 2011,
Abstract: 随着电力电子技术及其应用的快速发展,高压大功率换流器的应用越来越多。大功率绝缘栅双极晶体管(insulationgatebipolartransistor,IGBT)串联是实现高压大功率自换相换流器的一个重要基础。大功率串联IGBT运行中,最难解决的是串联IGBT之间的电压不平衡问题。为推进高压大功率换流器的研究,对大功率串联IGBT中器件间的电压不平衡机制进行了系统的研究。根据IGBT阀在串联运行时的主要静态、动态过程,结合IGBT自身的特性,得出了影响产生串联IGBT电压不平衡的各个因素,并对各个元件间的电压不平衡度进行分析,为进行串联IGBT电压平衡化的控制打下基础。
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