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 Physics , 2014, Abstract: In this paper we present the fluorescence decay profiles of vanadium and titanium doped gallium lanthanum sulphide (GLS) glass at various doping concentrations between 0.01 and 1% (molar). We demonstrate that below a critical doping concentration the fluorescence decay profile can be fitted with the stretched exponential function: exp[-(t/{\tau})\b{eta}], where {\tau} is the fluorescence lifetime and \b{eta} is the stretch factor. At low concentrations the lifetime for vanadium and titanium doped GLS was 30 {\mu}s and 67 {\mu}s respectively. We validate the use of the stretched exponential model and discuss the possible microscopic phenomenon it arises from. We also demonstrate that above a critical doping concentration of around 0.1% (molar) the fluorescence decay profile can be fitted with the double exponential function: a*exp-(t/{\tau}1)+ b*exp-(t/{\tau}2), where {\tau}1and {\tau}2 are characteristic fast and slow components of the fluorescence decay profile, for vanadium the fast and slow components are 5 {\mu}s and 30 {\mu}s respectively and for titanium they are 15 {\mu}s and 67 {\mu}s respectively. We also show that the fluorescence lifetime of vanadium and titanium at low concentrations in the oxide rich host gallium lanthanum oxy-sulphide (GLSO) is 43 {\mu}s and 97 {\mu}s respectively, which is longer than that in GLS. From this we deduce that vanadium and titanium fluorescing ions preferentially substitute into high efficiency oxide sites until at a critical concentration they become saturated and low efficiency sulphide sites start to be filled.
 Mark A. Hughes Physics , 2014, Abstract: This thesis focuses on two different, but complementary, aspects of the modification of gallium lanthanum sulphide (GLS) glasses. Firstly the addition of transition metal ions as dopants is examined and their potential for use as active optical materials is explored. It is also argued that the spectroscopic analysis of transition metal ions is a useful tool for evaluating the local environment of their host. Secondly femtosecond (fs) laser modification of GLS is investigated as a method for waveguide formation.
 Physics , 2015, Abstract: Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In both materials, PL shows dramatic decrease by 10$^4$-10$^5$ when film thickness is reduced from 200 to 10 nm. Based on evidence from cw and time-resolved PL, we propose a model explaining the PL decrease as a result of non-radiative carrier escape via surface states.
 Analele Universitatii Bucuresti : Chimie , 2004, Abstract: Sulphide anion was determined indirectly, by potentiometric titration. For thispurpose, a known concentration of Ce4+ and sulphide ions was added into the electrochemicalcell. Ce4+ remained in the cell after his reduction by the sulphide ions was titrated with a Fe2+solution having a known concentration. The difference between total Ce4+ and the titrated Ce4+corresponds to the amount of Ce4+ reduced by the sulphide ion. The proposed method isreproducible, fast and allows the determination of sulphide ion in waters.
 Physics , 2011, Abstract: Enthalpies of formation of gallium interstitials and all the other native point defects in gallium arsenide are calculated using the same well-converged \emph{ab initio} techniques. Using these results, equilibrium concentrations of these defects are computed as a function of chemical potential from the arsenic rich limit to the gallium rich limit and as a function of the doping level from $p$-type to $n$-type. Gallium interstitial diffusion paths and migration barriers for diffusion are determined for all the interstitial charge states which are favored for Fermi levels anywhere in the gap, and the charge states which dominate diffusion as a function of Fermi level are identified. The effects of chemical potential, doping level, and non-equilibrium defect concentrations produced by ion implantation or irradiation on gallium self-diffusion are examined. Results are consistent with experimental results across the ranges of doping and stoichometry where comparisons can be made. Finally, these calculations shed some light on the complex situation for gallium diffusion in gallium arsenide that is gallium-rich and doped heavily $p$-type.