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Zhuang Xuezeng,Xia Shanhong,Liu Guangyi,

电子与信息学报 , 1997,
Abstract: A brief introduction of some major vacuum microelectronic devices is presented including field emitter arrays(FEA), feild emission displays(FED) and the vacuum microelectronic devices in microwave and millimeter-wave bands. The paper mainly discusses the requirements for FEA by the mentioned devices, possible solutions to the requirements, and further research topics. As an example, the paper also discusses research topics and problems about vacuum microelectronic microwave tubes.

Liu Guangyi,Zhuang Xuezeng,

红外与毫米波学报 , 1995,
Abstract: The paper describes the research advances of some key components such as the field emission array (FEA), input & output circuits for use in microwave & millimeter wave vacuum microelectronic devices (MMW-VMD) and so on, discusses the method for overcoming the transverse velocity components of electrons, the noise, the conductivity loss and the emission non-uniformity problem, analyzes the space charges,emitter failure and so on.
Development of Silicon Photonics Devices Using Microelectronic Tools for the Integration on Top of a CMOS Wafer  [PDF]
J. M. Fedeli,L. Di Cioccio,D. Marris-Morini,L. Vivien,R. Orobtchouk,P. Rojo-Romeo,C. Seassal,F. Mandorlo
Advances in Optical Technologies , 2008, DOI: 10.1155/2008/412518
Abstract: Photonics on CMOS is the integration of microelectronics technology and optics components to enable either improved functionality of the electronic circuit or miniaturization of optical functions. The integration of a photonic layer on an electronic circuit has been studied with three routes. For combined fabrication at the front end level, several building blocks using a silicon on insulator rib technology have been developed: slightly etched rib waveguide with low (0.1 dB/cm) propagation loss, a high speed and high responsivity Ge integrated photodetector and a 10 GHz Si modulators. Next, a wafer bonding of silicon rib and stripe technologies was achieved above the metallization layers of a CMOS wafer. Last, direct fabrication of a photonic layer at the back-end level was achieved using low-temperature processes with amorphous silicon waveguide (loss 5 dB/cm), followed by the molecular bonding of InP dice and by the processing in microelectronics environment of InP sources and detector.
Carbon Nanotubes in Microelectronic Applications  [PDF]
F. Kreupl,G. S. Duesberg,A. P. Graham,M. Liebau,E. Unger,R. Seidel,W. Pamler,W. Hoenlein
Physics , 2004,
Abstract: Carbon nanotubes with their outstanding electrical and mechanical properties are suggested as interconnect material of the future and as switching devices, which could outperform silicon devices. In this paper we will introduce nanotubes, specify the applications, where nanotubes can contribute to the advancement of Moore's law and show our progress of nanotube process integration in a microelectronic compatible way. The growth of single individual nanotubes at lithographically defined locations on whole wafers as a key requirement for the successful implementation of nanotubes is shown. In terms of nanotube transistors we propose a vertical nanotube transistor concept which outperforms the ITRS requirements for the year 2016. The performance is mainly limited by contact resistances, but by comparison with silicon devices we show that fabricated nanotube transistors already today exceed the values for transconductance, on-resistance and drive current of silicon devices.
Joule Expansion Imaging Techniques on Microlectronic Devices  [PDF]
S. Grauby,L. -D. Patino Lopez,A. Salhi,E. Puyoo,J. -M. Rampnoux,W. Claeys,S. Dilhaire
Physics , 2008,
Abstract: We have studied the electrically induced off-plane surface displacement on two microelectronic devices using Scanning Joule Expansion Microscopy (SJEM). We present the experimental method and surface displacement results. We show that they can be successfully compared with surface displacement images obtained using an optical interferometry method. We also present thermal images using Scanning Thermal Microscopy (SThM) technique to underline that SJEM is more adapted to higher frequency measurements, which should improve the spatial resolution.
Optical orientation in bipolar spintronic devices  [PDF]
Jaroslav Fabian,Igor Zutic
Physics , 2008, DOI: 10.1088/0268-1242/23/11/114005
Abstract: Optical orientation is a highly efficient tool for the generation of nonequilibrium spin polarization in semiconductors. Combined with spin-polarized transport it offers new functionalities for conventional electronic devices, such as pn junction bipolar diodes or transistors. In nominally nonmagnetic junctions optical orientation can provide a source for spin capacitance--the bias-dependent nonequilibrium spin accumulation--or for spin-polarized current in bipolar spin-polarized solar cells. In magnetic junctions, the nonequilibrium spin polarization generated by spin orientation in a proximity of an equilibrium magnetization gives rise to the spin-voltaic effect (a realization of the Silsbee-Johnson coupling), enabling efficient control of electrical properties such as the I-V characteristics of the junctions by magnetic and optical fields. This article reviews the main results of investigations of spin-polarized and magnetic pn junctions, from spin capacitance to the spin-voltaic effect.
Optical surface devices for atomic and atom physics  [PDF]
Dobroslawa Bartoszek,Jacek Fiutowski,Tomasz Dohnalik,Tomasz Kawalec
Optica Applicata , 2010,
Abstract: The applications in basic science of optical surface devices for atoms are reviewed, with the emphasis on the optical dipole mirrors. The example of experimental realization of such a mirror constructed in our group is shortly presented. Some methods used in its characterization are shown.
The environment effect on operation of in-vessel mirrors for plasma diagnostics in fusion devices  [PDF]
V. S. Voitsenya,Ch. Gil,V. G. Konovalov,A. Litnovsky,M. Lipa,M. Rubel,A. Sagara,A. Sakasai,B. Schunke,T. Sugie,G. De Temmerman,K. Yu Vukolov,S. N. Zvonkov,P. Wienhold
Physics , 2004,
Abstract: First mirrors will be the plasma facing components of optical diagnostic systems in ITER. Mirror surfaces will undergo modification caused by erosion and re-deposition processes [1,2]. As a consequence, the mirror performance may be changed and may deteriorate [3,4]. In the divertor region it may also be obscured by deposition [5-7]. The limited access to in-vessel components of ITER calls for testing the mirror materials in present day devices in order to gather information on the material damage and degradation of the mirror performance, i.e. reflectivity. A dedicated experimental programme, First Mirror Test (FMT), has been initiated at the JET tokamak within the framework Tritium Retention Studies (TRS).
Quantum tomography as a tool for the characterization of optical devices  [PDF]
G. Mauro D'Ariano,Matteo G. A. Paris,Martina De Laurentis,Alberto Porzio,Salvatore Solimeno
Physics , 2001, DOI: 10.1088/1464-4266/4/3/366
Abstract: We describe a novel tool for the quantum characterization of optical devices. The experimental setup involves a stable reference state that undergoes an unknown quantum transformation and is then revealed by balanced homodyne detection. Through tomographic analysis on the homodyne data we are able to characterize the signal and to estimate parameters of the interaction, such as the loss of an optical component, or the gain of an amplifier. We present experimental results for coherent signals, with application to the estimation of losses introduced by simple optical components, and show how these results can be extended to the characterization of more general optical devices.
Porous Dielectrics in Microelectronic Wiring Applications  [PDF]
Vincent McGahay
Materials , 2010, DOI: 10.3390/ma3010536
Abstract: Porous insulators are utilized in the wiring structure of microelectronic devices as a means of reducing, through low dielectric permittivity, power consumption and signal delay in integrated circuits. They are typically based on low density modifications of amorphous SiO 2 known as SiCOH or carbon-doped oxides, in which free volume is created through the removal of labile organic phases. Porous dielectrics pose a number of technological challenges related to chemical and mechanical stability, particularly in regard to semiconductor processing methods. This review discusses porous dielectric film preparation techniques, key issues encountered, and mitigation strategies.
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