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Electrically Tunable Band Gap in Silicene  [PDF]
N. D. Drummond,V. Zolyomi,V. I. Fal'ko
Physics , 2011, DOI: 10.1103/PhysRevB.85.075423
Abstract: We report calculations of the electronic structure of silicene and the stability of its weakly buckled honeycomb lattice in an external electric field oriented perpendicular to the monolayer of Si atoms. We find that the electric field produces a tunable band gap in the Dirac-type electronic spectrum, the gap being suppressed by a factor of about eight by the high polarizability of the system. At low electric fields, the interplay between this tunable band gap, which is specific to electrons on a honeycomb lattice, and the Kane-Mele spin-orbit coupling induces a transition from a topological to a band insulator, whereas at much higher electric fields silicene becomes a semimetal.
Electrically tunable magnetoplasmons in a monolayer of silicene or germanene  [PDF]
M. Tahir,P. Vasilopoulos
Physics , 2015, DOI: 10.1088/0953-8984/27/7/075303
Abstract: We theoretically study electrically tunable magnetoplasmons in a monolayer of silicene or germanene. We derive the dynamical response function and take into account the effects of strong spin-orbit coupling (SOC) and of an external electric filed $E_z$ perpendicular to the plane of the buckled silicene/germanene. Employing the random-phase approximation we analyze the magnetoplasmon spectrum. The dispersion relation has the same form as in a two-dimensional electron gas with the cyclotron and plasma frequencies modified due to the SOC and the field $E_z$. In the absence of SOC and $E_z$, our results agree well with recent experiments on graphene. The predicted effects could be tested by experiments similar to those on graphene and would be useful for future spintronics and optoelectronic devices.
Electrically tunable resonant scattering in fluorinated bilayer graphene  [PDF]
Adam A. Stabile,Aires Ferreira,Jing Li,N. M. R. Peres,J. Zhu
Physics , 2015, DOI: 10.1103/PhysRevB.92.121411
Abstract: Adatom-decorated graphene offers a promising new path towards spintronics in the ultrathin limit. We combine experiment and theory to investigate the electronic properties of dilutely fluorinated bilayer graphene, where the fluorine adatoms covalently bond to the top graphene layer. We show that fluorine adatoms give rise to resonant impurity states near the charge neutrality point of the bilayer, leading to strong scattering of charge carriers and hopping conduction inside a field-induced band gap. Remarkably, the application of an electric field across the layers is shown to tune the resonant scattering amplitude from fluorine adatoms by nearly twofold. The experimental observations are well explained by a theoretical analysis combining Boltzmann transport equations and fully quantum-mechanical methods. This paradigm can be generalized to many bilayer graphene-adatom materials, and we envision that the realization of electrically tunable resonance may be a key advantage in graphene-based spintronic devices.
Electrically tunable solid-state silicon nanopore ion filter  [cached]
Vidal Julien,Gracheva Maria,Leburton Jean-Pierre
Nanoscale Research Letters , 2006,
Abstract: We show that a nanopore in a silicon membrane connected to a voltage source can be used as an electrically tunable ion filter. By applying a voltage between the heavily doped semiconductor and the electrolyte, it is possible to invert the ion population inside the nanopore and vary the conductance for both cations and anions in order to achieve selective conduction of ions even in the presence of significant surface charges in the membrane. Our model based on the solution of the Poisson equation and linear transport theory indicates that in narrow nanopores substantial gain can be achieved by controlling electrically the width of the charge double layer.
A New Class of Electrically Tunable Metamaterial Terahertz Modulators  [PDF]
Rusen Yan,Berardi Sensale-Rodriguez,Lei Liu,Debdeep Jena,Huili Grace Xing
Physics , 2012, DOI: 10.1364/OE.20.028664
Abstract: Switchable metamaterials offer unique solutions for efficiently manipulating electromagnetic waves, particularly for terahertz waves, which has been difficult since naturally occurring materials rarely respond to terahertz frequencies controllably. However, few terahertz modulators demonstrated to date exhibit simultaneously low attenuation and high modulation depth. In this letter we propose a new class of electrically-tunable terahertz metamaterial modulators employing metallic frequency-selective-surfaces (FSS) in conjunction with capacitively-tunable layers of electrons, promising near 100% modulation depth and < 15% attenuation. The fundamental departure in our design from the prior art is tuning enabled by self-gated electron layers that is independent from the metallic FSS. Our proposal is applicable to all possible electrically tunable elements including graphene, Si, MoS2, oxides etc, thus opening up myriad opportunities for realizing high performance switchable metamaterials over an ultra-wide terahertz frequency range.
Single Electron Transport in electrically tunable nanomagnets  [PDF]
J. Fernandez-Rossier,R. Aguado
Physics , 2006, DOI: 10.1103/PhysRevLett.98.106805
Abstract: We study a single electron transistor (SET) based upon a II-VI semiconductor quantum dot doped with a single Mn ion. We present evidence that this system behaves like a quantum nanomagnet whose total spin and magnetic anisotropy depend dramatically both on the number of carriers and their orbital nature. Thereby, the magnetic properties of the nanomagnet can be controlled electrically. Conversely, the electrical properties of this SET depend on the quantum state of the Mn spin, giving rise to spin-dependent charging energies and hysteresis in the Coulomb blockade oscillations of the linear conductance.
Devices with electrically tunable topological insulating phases  [PDF]
Paolo Michetti,Bj?rn Trauzettel
Physics , 2013, DOI: 10.1063/1.4792275
Abstract: Solid-state topological insulating phases, characterized by spin-momentum locked edge modes, provide a powerful route for spin and charge manipulation in electronic devices. We propose to control charge and spin transport in the helical edge modes by electrically switching the topological insulating phase in a HgTe/CdTe double quantum well device. We introduce the concept of a topological field-effect-transistor and analyze possible applications to a spin battery, which also realize a set up for an all-electrical investigation of the spin-polarization dynamics in metallic islands.
Topological Phase Transition and Electrically Tunable Diamagnetism in Silicene  [PDF]
Motohiko Ezawa
Physics , 2012, DOI: 10.1140/epjb/e2012-30577-0
Abstract: Silicene is a monolayer of silicon atoms forming a honeycomb lattice. The lattice is actually made of two sublattices with a tiny separation. Silicene is a topological insulator, which is characterized by a full insulating gap in the bulk and helical gapless edges. It undergoes a phase transition from a topological insulator to a band insulator by applying external electric field. Analyzing the spin Chern number based on the effective Dirac theory, we find their origin to be a pseudospin meron in the momentum space. The peudospin degree of freedom arises from the two-sublattice structure. Our analysis makes clear the mechanism how a phase transition occurs from a topological insulator to a band insulator under increasing electric field. We propose a method to determine the critical electric field with the aid of diamagnetism of silicene. Diamagnetism is tunable by the external electric field, and exhibits a singular behaviour at the critical electric field. Our result is important also from the viewpoint of cross correlation between electric field and magnetism. Our finding will be important for future electro-magnetic correlated devices.
Electrically Tunable Spin Polarization in a Carbon-Nanotube Spin Diode  [PDF]
Christopher A. Merchant,Nina Markovic
Physics , 2007, DOI: 10.1103/PhysRevLett.100.156601
Abstract: We have studied the current through a carbon nanotube quantum dot with one ferromagnetic and one normal-metal lead. For the values of gate voltage at which the normal lead is resonant with the single available non-degenerate energy level on the dot, we observe a pronounced decrease in the current for one bias direction. We show that this rectification is spin-dependent, and that it stems from the interplay between the spin accumulation and the Coulomb blockade on the quantum dot. Our results imply that the current is spin-polarized for one direction of the bias, and that the degree of spin polarization is fully and precisely tunable using the gate and bias voltages. As the operation of this spin diode does not require high magnetic fields or optics, it could be used as a building block for electrically controlled spintronic devices.
Dephasing of quantum dot exciton polaritons in electrically tunable nanocavities  [PDF]
A. Laucht,N. Hauke,J. M. Villas-B?as,F. Hofbauer,M. Kaniber,G. B?hm,J. J. Finley
Physics , 2009, DOI: 10.1103/PhysRevLett.103.087405
Abstract: We experimentally and theoretically investigate dephasing of zero dimensional microcavity polaritons in electrically tunable single dot photonic crystal nanocavities. Such devices allow us to alter the dot-cavity detuning in-situ and to directly probe the influence on the emission spectrum of varying the incoherent excitation level and the lattice temperature. By comparing our results with theory we obtain the polariton dephasing rate and clarify its dependence on optical excitation power and lattice temperature. For low excitation levels we observe a linear temperature dependence, indicative of phonon mediated polariton dephasing. At higher excitation levels, excitation induced dephasing is observed due to coupling to the solid-state environment. The results provide new information on coherence properties of quantum dot microcavity polaritons.
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