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EXCITON ENERGY OF THE InAs/GaAs SELF-ASSEMBLED QUANTUM DOT IN A SEMICONDUCTOR MICROCAVITY

Pan Liu-xian,Li Shu-shen,Xia Jian-bai,

中国物理 B , 2001,
Abstract: We report on the theoretical study of the interaction of the quantum dot (QD) exciton with the photon waveguide models in a semiconductor microcavity. The InAs/GaAs self-assembled QD exciton energies are calculated in a microcavity. The calculated results reveal that the electromagnetic field reduces the exciton energies in a semiconductor microcavity. The effect of the electromagnetic field decreases as the radius of the QD increases. Our calculated results are useful for designing and fabricating photoelectron devices.
Excitation-induced dephasing in a resonantly driven InAs/GaAs quantum dot  [PDF]
Léonard Monniello,Catherine Tonin,Richard Hostein,Aristide Lemaitre,Anthony Martinez,Valia Voliotis,Roger Grousson
Physics , 2013, DOI: 10.1103/PhysRevLett.111.026403
Abstract: We report on coherent emission of the neutral exciton state in a single semiconductor self-assembled InAs/GaAs quantum dot embedded in a one-dimensional waveguide, under resonant picosecond pulsed excita- tion. Direct measurements of the radiative lifetime and coherence time are performed as a function of excitation power and temperature. The characteristic damping of Rabi oscillations which is observed, is attributed to an excitation-induced dephasing due to a resonant coupling between the emitter and the acoustic phonon bath of the matrix. Other sources responsible for the decrease of the coherence time have been evidenced, in particular an enhancement of the radiative recombination rate due to the resonant strong coupling between the dot and the one-dimensional optical mode. As a consequence, the emission couples very efficiently into the waveguide mode leading to an additional relaxation term of the excited state population.
Homogeneous Linewidth Narrowing of the Charged Exciton via Nuclear Spin Screening in an InAs/GaAs Quantum Dot Ensemble  [PDF]
G. Moody,M. Feng,C. McDonald,R. P. Mirin,K. L. Silverman
Physics , 2014, DOI: 10.1103/PhysRevB.90.205306
Abstract: In semiconductor quantum dots, the electron hyperfine interaction with the nuclear spin bath is the leading source of spin decoherence at cryogenic temperature. Using high-resolution two-color differential transmission spectroscopy, we demonstrate that such electron-nuclear coupling also imposes a lower limit for the positively charged exciton dephasing rate, \gamma, in an ensemble of InAs/GaAs quantum dots. We find that the dephasing rate is sensitive to the strength of the hyperfine interaction, which can be controlled through the application of an external magnetic field in the Faraday configuration. At zero applied field, strong electron-nuclear coupling induces additional dephasing beyond the radiative limit and \gamma = 230 MHz (0.95 \mu eV). Screening of the hyperfine interaction is achieved for an external field of ~1 T, resulting in \gamma = 172 MHz (0.71 \mu eV) limited only by spontaneous recombination. On the other hand, application of a Voigt magnetic field mixes the spin eigenstates, which increases the dephasing rate by up to 75%. These results are reproduced with a simple and intuitive model that captures the essential features of the electron hyperfine interaction and its influence on \gamma.
Fast preparation of single hole spin in InAs/GaAs quantum dot in Voigt geometry magnetic field  [PDF]
T. M. Godden,J. H. Quilter,A. J. Ramsay,Yanwen Wu,P. Brereton,I. J. Luxmoore,J. Puebla,A. M. Fox,M. S. Skolnick
Physics , 2012, DOI: 10.1103/PhysRevB.85.155310
Abstract: The preparation of a coherent heavy-hole spin via ionization of a spin-polarized electron-hole pair in an InAs/GaAs quantum dot in a Voigt geometry magnetic field is investigated. For a dot with a 17 ueV bright-exciton fine-structure splitting, the fidelity of the spin preparation is limited to 0.75, with optimum preparation occurring when the effective fine-structure of the bright-exciton matches the in-plane hole Zeeman energy. In principle, higher fidelities can be achieved by minimizing the bright-exciton fine-structure splitting.
Optical alignment and polarization conversion of neutral exciton spin in individual InAs/GaAs quantum dots  [PDF]
K. Kowalik,O. Krebs,A. Lema?tre,J. A. Gaj,P. Voisin
Physics , 2008, DOI: 10.1103/PhysRevB.77.161305
Abstract: We investigate exciton spin memory in individual InAs/GaAs self-assembled quantum dots via optical alignment and conversion of exciton polarization in a magnetic field. Quasiresonant phonon-assisted excitation is successfully employed to define the initial spin polarization of neutral excitons. The conservation of the linear polarization generated along the bright exciton eigenaxes of up to 90% and the conversion from circular- to linear polarization of up to 47% both demonstrate a very long spin relaxation time with respect to the radiative lifetime. Results are quantitatively compared with a model of pseudo-spin 1/2 including heavy-to-light hole mixing.
Exciton-LO-phonon dynamics in InAs/GaAs quantum dots: Effects of zone-edge phonon damping  [PDF]
Pawel Machnikowski,Lucjan Jacak
Physics , 2003, DOI: 10.1103/PhysRevB.71.115309
Abstract: The dynamics of an exciton-LO-phonon system after an ultrafast optical excitation in an InAs/GaAs quantum dot is studied theoretically. Influence of anharmonic phonon damping and its interplay with the phonon dispersion is analyzed. The signatures of the zone-edge decay process in the absorption spectrum and time evolution are highlighted, providing a possible way of experimental investigation on phonon anharmonicity effects.
PHOTOLUMINESCENCE OF InAs/GaAs SUBMONOLAYER STRUCTURE UNDER HYDROSTATIC PRESSURE
InAs/GaAs亚单层结构的静压光谱研究

Li Guohua,Han Hexiang,Wang Zhaoping,
李国华
,李伟

红外与毫米波学报 , 1997,
Abstract: The photoluminescence of InAs/GaAs submonolayer structure was measured at 15K under hydrostatic pressure up to 8 GPa. At normal pressure, the peak energies of the heavy hole exciton emission have a blue shift with the decrease of the thickness of the InAs layer, and with a narrowing peak width and weakening peak intensity. The pressure behavior of these peaks is similar to that of the GaAs matrix, indicating that the model of quantum well (quantum wire, quantum dot) structure is still valid for InAs/GaAs submonolayer. The increases of the confined energies for electrons and heavy holes are 23 and 42 meV, respectively, for 1/3 monolayer InAs/GaAs sample due to the additional lateral confinement of carriers.
Optical pumping and non-destructive readout of a single magnetic impurity spin in an InAs/GaAs quantum dot  [PDF]
Emmanuel Baudin,Emile Benjamin,Aristide Lema?tre,Olivier Krebs
Physics , 2011, DOI: 10.1103/PhysRevLett.107.197402
Abstract: We report on the resonant optical pumping of the |\pm1> spin states of a single Mn dopant in an InAs/GaAs quantum dot embedded itself in a charge tuneable device. The experiment relies on a "W" scheme of transitions reached when a suitable longitudinal magnetic field is applied. The optical pumping is achieved via the resonant excitation of the central {\Lambda} system at the neutral exciton X0 energy. For a specific gate voltage, the red-shifted photoluminescence of the charged exciton X- is observed, which allows non-destructive readout of the spin polarization. An arbitrary spin preparation in the |+1> or |-1> state characterized by a polarization near or above 50% is evidenced.
Non-linear exciton spin-splitting in single InAs/GaAs self-assembled quantum structures in ultrahigh magnetic fields  [PDF]
A. Babinski,G. Ortner,S. Raymond,M. Potemski,M. Bayer,P. Hawrylak,A. Forchel,Z. Wasilewski,S. Fafard
Physics , 2005, DOI: 10.1103/PhysRevB.74.075310
Abstract: We report on the magnetic field dispersion of the exciton spin-splitting and diamagnetic shift in single InAs/GaAs quantum dots (QDs) and dot molecules (QDMs) up to $B$ = 28 T. Only for systems with strong geometric confinement, the dispersions can be well described by simple field dependencies, while for dots with weaker confinement considerable deviations are observed: most importantly, in the high field limit the spin-splitting shows a non-linear dependence on $B$, clearly indicating light hole admixtures to the valence band ground state.
Impact of dot size on dynamical characteristics of InAs/GaAs quantum dot lasers  [PDF]
Esfandiar Rajaei,Mahdi Ahmadi Borji
Physics , 2015,
Abstract: The purpose of this research is to study laser dynamics of InAs/GaAs Quantum Dot Lasers (QDLs) by changing QD energy levels. To date, most of the investigations have focused on only one of these circumstances, and hardly the result of change in the energy levels can be seen in lasing. In this work, in the first step, energy levels of lens-shape QDs are investigated by the eight-band k.p method, their variation for different QD sizes are surveyed, and recombination energies of the discrete levels are determined. Then, by representing a three-level InAs/GaAs QD laser, dynamics of such a laser device is numerically studied by rate equations in which homogeneous and inhomogeneous broadenings are taken into account. The lasing process for both Ground State (GS) and Excited States (ES) was found to be much sensitive to the QD size. It was observed that in larger QDs, photon number and bandwidth of the small signal modulation decrease but turn-on delay, maximum output power, and threshold current of gain increase. It was also found that for a good modulation, smaller QDs, and form the point of view of high-power applications, larger QDs seem better. Keywords: quantum dot lasers, QD size, energy level control, small signal modulation
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