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Electrical spin injection and transport in Germanium  [PDF]
Yi Zhou,Wei Han,Li-Te Chang,Faxian Xiu,Minsheng Wang,Michael Oehme,Inga A. Fischer,Joerg Schulze,Roland. K. Kawakami,Kang L. Wang
Physics , 2011, DOI: 10.1103/PhysRevB.84.125323
Abstract: We report the first experimental demonstration of electrical spin injection, transport and detection in bulk germanium (Ge). The non-local magnetoresistance in n-type Ge is observable up to 225K. Our results indicate that the spin relaxation rate in the n-type Ge is closely related to the momentum scattering rate, which is consistent with the predicted Elliot-Yafet spin relaxation mechanism for Ge. The bias dependence of the nonlocal magnetoresistance and the spin lifetime in n-type Ge is also investigated.
Electrical spin injection and detection in Germanium using three terminal geometry  [PDF]
A. Jain,L. Louahadj,J. Peiro,J. C. Le Breton,C. Vergnaud,A. Barski,C. Beigné,L. Notin,A. Marty,V. Baltz,S. Auffret,E. Augendre,H. Jaffrès,J. M. George,M. Jamet
Physics , 2011, DOI: 10.1063/1.3652757
Abstract: In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/Al$_{2}$O$_{3}$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin accumulation signal of the order of 1 meV consistent with the sequential tunneling process via interface states in the vicinity of the Al$_{2}$O$_{3}$/Ge interface. This spin signal is further observable up to 220 K. Moreover, the presence of a strong \textit{inverted} Hanle effect points at the influence of random fields arising from interface roughness on the injected spins.
Crossover from spin accumulation into interface states to spin injection in the germanium conduction band  [PDF]
A. Jain,J. -C. Rojas-Sanchez,M. Cubukcu,J. Peiro,J. C. Le Breton,E. Prestat,C. Vergnaud,L. Louahadj,C. Portemont,C. Ducruet,V. Baltz,A. Barski,P. Bayle-Guillemaud,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet
Physics , 2012, DOI: 10.1103/PhysRevLett.109.106603
Abstract: Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of $n$-Ge. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from 200 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with spin diffusion model. More interestingly, we demonstrate in this regime a significant modulation of the spin signal by spin pumping generated by ferromagnetic resonance and also by applying a back-gate voltage which are clear manifestations of spin current and accumulation in the germanium conduction band.
Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts  [PDF]
K. Kasahara,Y. Baba,K. Yamane,Y. Ando,S. Yamada,Y. Hoshi,K. Sawano,M. Miyao,K. Hamaya
Physics , 2011, DOI: 10.1063/1.3670985
Abstract: Using high-quality Fe$_{3}$Si/$n^{+}$-Ge Schottky-tunnel-barrier contacts, we study spin accumulation in an $n$-type germanium ($n$-Ge) channel. In the three- or two-terminal voltage measurements with low bias current conditions at 50 K, Hanle-effect signals are clearly detected only at a forward-biased contact. These are reliable evidence for electrical detection of the spin accumulation created in the $n$-Ge channel. The estimated spin lifetime in $n$-Ge at 50 K is one order of magnitude shorter than those in $n$-Si reported recently. The magnitude of the spin signals cannot be explained by the commonly used spin diffusion model. We discuss a possible origin of the difference between experimental data and theoretical values.
Thermal spin injection and accumulation in CoFe/MgO tunnel contacts to n-type Si through Seebeck spin tunneling  [PDF]
Kun-Rok Jeon,Byoung-Chul Min,Seung-Young Park,Kyeong-Dong Lee,Hyon-Seok Song,Youn-Ho Park,Sung-Chul Shin
Physics , 2013, DOI: 10.1063/1.4823540
Abstract: We report the thermal spin injection and accumulation in crystalline CoFe/MgO tunnel contacts to n-type Si through Seebeck spin tunneling (SST). With the Joule heating (laser heating) of Si (CoFe), the thermally induced spin accumulation is detected by means of the Hanle effect for both polarities of the temperature gradient across the tunnel contact. The magnitude of the thermal spin signal scales linearly with the heating power and its sign is reversed as we invert the temperature gradient, demonstrating the major features of SST and thermal spin accumulation. We observe that, for the Si (CoFe) heating, the thermal spin signal induced by SST corresponds to the majority (minority) spin accumulation in the Si. Based on a quantitative comparison of thermal and electrical spin signals, it is noted that the thermal spin injection through SST can be a viable approach for the efficient injection of spin accumulation
Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium  [PDF]
S. Iba,H. Saito,A. Spiesser,S. Watanabe,R. Jansen,S. Yuasa,K. Ando
Physics , 2012, DOI: 10.1143/APEX.5.023003
Abstract: Spin accumulation induced in p-type germanium from Fe/MgO tunnel contacts is studied as a function of hole concentration p (10^16 - 10^19 cm-3). For all p, the contacts are free of rectification and Schottky barrier, guaranteeing spin injection into the Ge and preventing spin accumulation enhancement by two-step tunneling via interface states. The observed spin accumulation is smallest for nondegenerate doping (p ~ 10^16 cm-3) and increases for heavily doped Ge. This trend is opposite to what is expected from spin injection and diffusion theory. For heavily doped Ge, the observed spin accumulation is orders of magnitude larger than predicted.
Anomalous scaling of spin accumulation in ferromagnetic tunnel devices with silicon and germanium  [PDF]
S. Sharma,A. Spiesser,S. P. Dash,S. Iba,S. Watanabe,B. J. van Wees,H. Saito,S. Yuasa,R. Jansen
Physics , 2012,
Abstract: The magnitude of spin accumulation created in semiconductors by electrical injection of spin-polarized electrons from a ferromagnetic tunnel contact is investigated, focusing on how the spin signal detected in a Hanle measurement varies with the thickness of the tunnel oxide. An extensive set of spin-transport data for Si and Ge magnetic tunnel devices reveals a scaling with the tunnel resistance that violates the core feature of available theories, namely, the linear proportionality of the spin voltage to the injected spin current density. Instead, an anomalous scaling of the spin signal with the tunnel resistance is observed, following a power-law with an exponent between 0.75 and 1 over 6 decades. The scaling extends to tunnel resistance values larger than 10$^{9}$ $\Omega\mu m^2$, far beyond the regime where the classical impedance mismatch plays a role. This scaling is incompatible with existing theory for direct tunnel injection of spins into the semiconductor. It also demonstrates conclusively that the large spin signal does not originate from two-step tunneling via localized states near the oxide/semiconductor interface. Control experiments on devices with a non-magnetic metal (Ru) electrode, instead of the semiconductor, exhibit no Hanle spin signal, showing that spin accumulation in localized states within the tunnel barrier is also not responsible. Control devices in which the spin current is removed by inserting a non-magnetic interlayer exhibit no Hanle signals either, proving that the spin signals observed in the standard devices are genuine and originate from spin-polarized tunneling and the resulting spin accumulation. Altogether, the scaling results suggest that the spin signal is proportional to the applied bias voltage, rather than the (spin) current.
Electrical expression of spin accumulation in ferromagnet/semiconductor structures  [PDF]
L. Cywinski,H. Dery,P. Dalal,L. J. Sham
Physics , 2007, DOI: 10.1142/S021798490701395X
Abstract: We treat the spin injection and extraction via a ferromagnetic metal/semiconductor Schottky barrier as a quantum scattering problem. This enables the theory to explain a number of phenomena involving spin-dependent current through the Schottky barrier, especially the counter-intuitive spin polarization direction in the semiconductor due to current extraction seen in recent experiments. A possible explanation of this phenomenon involves taking into account the spin-dependent inelastic scattering via the bound states in the interface region. The quantum-mechanical treatment of spin transport through the interface is coupled with the semiclassical description of transport in the adjoining media, in which we take into account the in-plane spin diffusion along the interface in the planar geometry used in experiments. The theory forms the basis of the calculation of spin-dependent current flow in multi-terminal systems, consisting of a semiconductor channel with many ferromagnetic contacts attached, in which the spin accumulation created by spin injection/extraction can be efficiently sensed by electrical means. A three-terminal system can be used as a magnetic memory cell with the bit of information encoded in the magnetization of one of the contacts. Using five terminals we construct a reprogrammable logic gate, in which the logic inputs and the functionality are encoded in magnetizations of the four terminals, while the current out of the fifth one gives a result of the operation.
Thermal Spin-Accumulation in Electric Conductors and Insulators  [PDF]
J. -E. Wegrowe,H. -J. Drouhin,D. Lacour
Physics , 2012,
Abstract: The interpretation of some recent measurements of spin-dependent voltage for which the electric conduction does not play a role rises some new fundamental questions about the effects of spin-dependent heat currents. A two spin-channel model is proposed in order to describe the effect of out-of-equilibrium spin-dependent heat carriers in electric conductors and insulators. It is shown that thermal spin-accumulation can be generated by the heat currents only over an arbitrarily long distance for both electric conductors or electric insulators. The diffusion equations for thermal spin-accumulation are derived in both cases, and the principle of its detection based on Spin-Nernst effect is described.
Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface  [PDF]
X. Lou,C. Adelmann,M. Furis,S. A. Crooker,C. J. Palmstrom,P. A. Crowell
Physics , 2006, DOI: 10.1103/PhysRevLett.96.176603
Abstract: We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is suppressed by a small transverse magnetic field, which depolarizes the spins in the semiconductor. The dependence of the electrical accumulation signal on magnetic field, bias current, and temperature is in good agreement with the predictions of a drift-diffusion model for spin-polarized transport.
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