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Design and Fabrication of SiGe HBT Low Noise Amplifier
SiGe HBT低噪声放大器的设计与制造

Shen Pei Zhang Wan-rong Jin Dong-yue Xie Hong-yun,

电子与信息学报 , 2010,
Abstract: A monolithic SiGe Heterojunction Bipolar Transistor (HBT) Low Noise Amplifier (LNA) is designed and fabricated in this paper. Composite resistance feedback loops are adopted in this amplifier. Hence, reasonable bias conditions, good port matching and low Noise Figure (NF) are achieved simultaneously by adjusting different feedback resistor smartly. Based on the 0.35-μm Si CMOS technology, the fabrication processes for monolithic amplifier integrated chip are developed. In the fabrication process of SiGe devices, base resistance of transistor is reduced by using titanium silicon (TiSi2) deposition in order to further decrease the NF of LNA. Finally, die area of this monolithic LNA is only 0.282 mm2 due to the absence of spiral inductor which occupies most of chip area. The measurement results indicate that, in the band from 0.2 to1.2 GHz, this LNA achieves the minimum NF of 2.5 dB, the maximum gain as high as 26.7 dB, and the input and output reflections (S11, S22) of less than -7.4 dB and -10 dB, respectively.
Possible Realization of Near Optimum Efficiency from n-Si-Ge/p-Ge-Si DDR Hetero Structure IMPATT Diode
International Journal of Materials Engineering , 2012, DOI: 10.5923/j.ijme.20120203.02
Abstract: Avalanche breakdown in a p-n junction can generate rf negative resistance due to twin delay mechanism (Avalanche Delay associated with growth of charge bump and transit time delay caused due to time elapsed for the grown charge bump drifting through the depletion zone) leading to generation of high frequency power in IMPATT mode. With the advancement of device technology and with the motive of furtherance of device performance, replacement of homo junction of single elemental semiconductor with hetero junction, hetero structure junctions from lattice matched pair of elemental semiconductors is now being explored as supported by recent reports. The introduction of an n-Ge and p-Ge impurity bumps on either side of junction interface of a Si p-n junction, results in the formation of a n-Si-Ge/p-Ge-Si hetero structure p-n junction. The analysis of such hetero structure Impatt diode for generation of micro/mm-wave power at designed atmospheric window frequencies of 15 and 94 GHz becomes the scope of the study of this paper. The results are computed through three tier sophisticated computer algorithm indicate efficiency enhancement in case of proposed hetero structure to nearly 29% (at X-band) as against only 14% for the corresponding the homo junction diodes associated with increase of diode negative conductance by nearly two fold which in turn could enhance the rf power delivery from the hetero structure diode by many fold. Presence of low BG Ge near high field junction interface and its order high carrier ionization rate (compared to Si) localizes the avalanche zone to below 10% of the depletion zone and thereby pushes the device efficiency and value of negative conductance. However the performance of complementary n-Ge-Si/p-Si-Ge hetero structure remains close to Si or Ge homo junction. The results are highly encouraging which may make Si-Ge-Si Hetero Structure Diode as a prospective microwave generator.
Carrier Depth Profile of Si/SiGe/Si n-p-n HBT Structural Materials Characterized by Electrochemical Capacitance-Voltage Method
Carrier Depth Profile of Si/SiGe/Si n-p-n HBT Structural Materials Characterized by Electrochemical Capacitance- Voltage Method

LIN Yan-Xia,HUANG Da-ding,ZHANG Xiu-lan,LIU Jin-ping,LI Jian-ping,GAO Fei,SUN Dian-zhao,ZENG Yi-ping,KONG Mei-ying,

半导体学报 , 2000,
Abstract: In recent years Si Ge Molecular Beam Epitaxy(MBE) has attracted much attentiondue to its application in researching new elements for high performance CMOSand bipolartechnologies1 ] . For example,Si/Si Ge/Si n-p-n HBT has been attache...
100ps time resolution with thin silicon pixel detectors and a SiGe HBT amplifier  [PDF]
Mathieu Benoit,Roberto Cardarelli,Stéphane Débieux,Yannick Favre,Giuseppe Iacobucci,Marzio Nessi,Lorenzo Paolozzi,Kenji Shu
Physics , 2015,
Abstract: A 100um thick silicon detector with 1mm2 pad readout optimized for sub-nanosecond time resolution has been developed and tested. Coupled to a purposely developed amplifier based on SiGe HBT technology, this detector was characterized at the H8 beam line at the CERN SPS. An excellent time resolution of (106+-1)ps for silicon detectors was measured with minimum ionizing particles.
SiGe HBTs Optimization for Wireless Power Amplifier Applications  [PDF]
Pierre-Marie Mans,Sebastien Jouan,Sebastien Fregonese,Benoit Vandelle,Denis Pache,Caroline Arnaud,Cristell Maneux,Thomas Zimmer
Active and Passive Electronic Components , 2010, DOI: 10.1155/2010/542572
Abstract: This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate the fT-BVCEO tradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge) profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile) is conducted in order to improve the fT values at high injection levels. 1. Introduction SiGe heterojunction bipolar transistors (HBTs) integrated into BiCMOS technologies have been providing cost-effective solutions to many of the building blocks of RF and microwave transceivers. Power amplifiers have remained an exception to this trend for some time, but SiGe HBTs have emerged as competitive alternatives to III-V devices for RF power applications in wireless handsets and cell phones [1]. State-of-the-art SiGe/Si HBTs dedicated to power amplifier application present a of 27?GHz with a BVCEO of 8.5?V [2]. However, for similar breakdown voltages, the achieved Johnson’s limit using SiGe power HBTs and their power-handling capability per unit emitter area are not comparable with III-V power devices since the minority carrier mobility and the bandgap are lower in Si compared with III-V counterparts [3]. To enhance SiGe HBTs performance in this field while maintaining its very competitive cost, further breakthrough in device design and optimization are mandatory. In this paper, we focused on three main SiGe HBTs features improvements: device robustness, temperature behavior and HF characteristics. The paper is organized as follows. First, process flow, RF power device structure and electrical device characteristics are illustrated. Results of static and dynamic performances are presented. Next, different optimization processes are described. These optimizations deal with collector tuning, Ge base profile engineering and Ge introduction into the collector layer. Finally, their impacts on the electrical characteristics are highlighted. 2. Device Structure Design and Fabrication Process 2.1. Process Flow Description This study has been carried out on the 250?nm SiGe HBT architecture shown in Figure 1, which consists in a double polysilicon quasi-self-aligned structure. Basically, the
A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications
基于无线功率放大器应用的多指结构SiGe HBT

Xue Chunlai,Shi Wenhu,Yao Fei,Cheng Buwen,Wang Hongjie,Yu Jinzhong,Wang Qiming,

半导体学报 , 2007,
Abstract: 采用简单的双台面工艺制作了完全平面结构的5个单元、10个发射极指大面积的SiGe HBT.器件表现出了良好的直流和高频特性,最大电流增益β为214.BVCEO为9V,集电极掺杂浓度为1×1017 cm-3,厚度为400nm时,BVCBO为16V.在直流偏置下IC=30mA,VCE=3.0V得到fT和fmax分别为18.0GHz和19.3GHz,1GHz下最大稳定增益为24.5dB,单端功率增益为26.6dB.器件采用了新颖的分单元结构,在大电流下没有明显的增益塌陷现象和热效应出现.
A 3.4-3.6 GHz power amplifier in an InGaP/GaAs HBT
A 3.4-3.6GHz Power amplifier in InGaP-GaAs HBT

Hao Mingli,Zhang Zongnan,Zhang Haiying,

半导体学报 , 2011,
Abstract: This paper presents a 3.4-3.6GHz power amplifier (PA) designed and implemented in InGaP/GaAs HBT technology. By optimizing the off-chip output matching network and designing an extra input-matching circuit on PCB, several problems are resolved, such as resonant frequency point migration, worse matching and lower gain caused by parasitics inside and outside of the chip. Under Vcc=4.3V and Vbias=3.3V, a P1dB of 27.1dBm has been measured at 3.4GHz with a PAE of 25.8%, the 2nd and 3rd harmonics are -64dBc and -51dBc, respectively. Besides, this PA shows a linear gain more than 28dB with S11<-12.4dB and S22<-7.4dB in 3.4-3.6GHz band.
Frequency Domain Dynamic Thermal Analysis in GaAs Hbt for Power Amplifier Applications
Than Tun Thein;Choi Look Law;Kai Fu
PIER , 2011, DOI: 10.2528/PIER11050301
Abstract: Dynamic temperature distributions in GaAs HBT are numerically analyzed in frequency domain as a function of power dissipation, frequency and space. Complete thermal characteristics, including frequency-dependent thermal impedance and phase lag behavior, are presented. The analysis is also extended for arbitrary periodic or aperiodic pulse heating operation to predict junction temperature of a Power Amplifier (PA) with non-constant envelope input signal. Dynamic junction temperatures of a single finger 2 μm x 20 μm GaAs HBT are predicted for square pulse envelope signal input with power levels varying with up to 10 dB above a nominal average level of 40 mW and with pulse widths ranging from 10 ns to 100 μs. With the input envelope signal amplitude of 10 dB above the average, the analytical results show that junction temperature rises from room temperature of 27C to 39C when heated by 10 ns pulse, increase to 36C by 100ns pulse, 105C by 1μs pulse and to 198C by 100 μs pulse. A novel setup is developed for nano-second pulsed measurements, and the analysis is validated through time domain on wafer pulsed measurements at three different power levels: 0 dB, 3 dB, and 6 dB above the average level. Results show that analytical results track well with measured junction temperature within the accuracy of ±5C over the entire measurement set.
Electrical Performance of Electron Irradiated SiGe HBT and Si BJT
Wentao HUANG,Jilin WANG,Zhinong LIU,Peiyi CHEN,Peihsin TSIEN,Xiangti MENG,

材料科学技术学报 , 2004,
Abstract: The change of electrical performances of 1 MeV electron irradiated silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied. After electron irradiation, both the collector current IC and the base current IB changed a little, and the current gainβ decreased a little for SiGe HBT. The higher the electron irradiation fluence was, the lower the IC decreased. For conventional Si BJT, IC and IB increased as well asβ decreased much larger than SiGe HBT under the same fluence. The contribution of IB was more important to the degradation ofβ for both SiGeHBT and Si BJT. It was shown that SiGe HBT had a larger anti-radiation threshold and better anti-radiation performance than Si BJT. The mechanism of electrical performance changes induced by irradiation was preliminarily discussed.
An on-chip temperature compensation circuit for an InGaP/GaAs HBT RF power amplifier
一种应用于InGaP/GaAs HBT射频功率放大器的在片温度补偿电路

Li Chengzhan,Chen Zhijian,Huang Jiwei,Wang Yongping,Ma Chuanhui,Yang Hanbing,Liao Yinghao,Zhou Yong,Liu Bin,

半导体学报 , 2011,
Abstract: A new on-chip temperature compensation circuit for a GaAs-based HBT RF amplifier applied to wireless communication is presented.The simple compensation circuit is composed of one GaAs HBT and five resistors with various values,which allow the power amplifier to achieve better thermal characteristics with a little degradation in performance.It effectively compensates for the temperature variation of the gain and the output power of the power amplifier by regulating the base quiescent bias current.The tempera...
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