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Orientation Effects on InGaP/GaAs HBT
晶向对InGaP/GaAs HBT性能的影响

Shi Ruiying,Liu Xunchun,Sun Haifeng,Yuan Zhipeng,
石瑞英
,刘训春,孙海峰,袁志鹏

半导体学报 , 2004,
Abstract: Orientation effect on self-aligned InGaP/GaAs HBT is described.The DC current gain of the transistor with the emitter long edge parallel to orientation is greater than that of parallel to .But it shows slightly better RF performance for orientation with .f. t 69GHz compared to .f. t of 62GHz for the orientation.In previous paper,the DC current gain difference of between the two orientation transistors is attributed to the piezoelectric effect,but the difference of .f. t is not explained.It is proposed that the dependence of the characteristics is attributed to both piezoelectric effect and the difference between etched pattern in different directions.
An InGaP/GaAs HBT MIC Power Amplifier with Power Combining at the X-Band
InGaP/GaAs HBT X波段混合集成功率合成放大器的研制

Chen Yanhu,Shen Huajun,Wang Xiantai,Chen Gaopeng,Liu Xinyu,Yuan Dongfeng,Wang Zuqiang,
陈延湖
,申华军,王显泰,陈高鹏,刘新宇,袁东风,王祖强

半导体学报 , 2008,
Abstract: A MIC power amplifier with power combining based on InGaP/GaAs HBT is developed and measured for the application of the latest high power amplifier stage of the X-band.A novel InGaP/GaAs HBT power transistor with an on-chip RC stabilization network is used as the power combing cell to improve the stability of the circuit.A compact microstripe line parallel matching network is used to divide and combine the power.By biasing the amplifier at class AB:Vcc=7V,Ic=2 30mA,a maximum CW stabile output power of 28.9d...
A Simplified VBIC Model and InGaP/GaAs HBT Wideband Amplifier Design
一种简化的VBIC模型和InGaP/GaAs HBT宽带放大器设计

Sun Lingling,Liu Jun,
孙玲玲
,刘军

半导体学报 , 2005,
Abstract: 采用一种新的简化VBIC模型对单、多指InGaP/GaAs HBT器件进行建模.测量和模型仿真I-V特性及其在多偏置条件下多频率点S参数对比结果表明,DC~9GHz频率范围内,简化后的模型可对InGaP/GaAs HBT交流小信号特性进行较好的表征.利用建立的模型设计出DC~9GHz两级直接耦合宽带放大器,该放大器增益达到19dB,输入、输出回波损耗分别低于-10dB和-8dB.
X Band MMIC Power Amplifier Based on InGaP/GaAs HBT
基于InGaP/GaAs HBT的X波段MMIC功率放大器研制

Chen Yanhu,Shen Huajun,Wang Xiantai,Ge Ji,Li Bin,Liu Xinyu,Wu Dexin,
陈延湖
,申华军,王显泰,葛荠,李滨,刘新宇,吴德馨

半导体学报 , 2007,
Abstract: An X band InGaP/GaAs HBT single stage MMIC power amplifier is reported.The self-aligning InGaP/GaAs HBT process was used to fabricate the circuit.The PA circuit is biased at the class AB state.The small signal S parameter test shows that at 8~8.5GHz,the linear power gain is 8~9dB,VSWRin<2,and VSWRout<3.After optimizing the collector bias,the linear gain is improved to 9~10dB.Under an 8.5GHz CW signal power test with optimized loading conditions,the P1dB of the circuit is 29.4dBm,relevant power gain is 7.2dB,and relevant PAE is 42%.The Psat of the circuit is 30dBm.
Wide Tuning Range VCDRO and Low Phase Noise DRO in InGaP/GaAs HBT Technology
Lee Jae-Young,Shrestha Bhnau,Yoon Jae-Ho,Kim Nam-Young
IETE Technical Review , 2007,
Abstract: A monolithic microwave integrated circuit voltage-controlled dielectric resonator oscillator (MMIC-VCDRO) is demonstrated at Ku-band for a low noise block down-converter (LNB) system in InGaP/GaAs HBT process with on-chip varactors. The fabricated VCDRO achieves high output power of 6.45 to 5.31 dBm with frequency tuning range of 165 MHz and also achieves low phase noise of under -95 dBc/Hz at 100 kHz offset and -115 dBc/Hz at 1 MHz offset. Also InGaP/GaAs HBT monolithic DRO with the same topology of the proposed VCDRO is fabricated which exhibits the output power of 1.33 dBm, and extremely low phase noise of -109 dBc/Hz at 100 kHz and -131 dBc/Hz at 1 MHz offset at the 10.75 GHz oscillation frequency.
An 11.5 GHz Cascode VCO with Low Phase Noise in InGaP/GaAs HBT Technology
Shreshtha Bhanu,Kennedy Gary,Kim Nam-Young
IETE Technical Review , 2007,
Abstract: A MMIC cascode VCO is designed, fabricated, and characterized for an X-band Low Noise Block(LNB) system using InGaP/GaAs HBT technology. A phase noise of -116.4 dBc/ Hz at an offset frequency of 1 MHz and an output power of 1.3 dBm is obtained at 11.526 GHz using a 3 V bias and a current consumption of 11 mA. The characteristics of this VCO are comparatively better than those with the different VCO configurations fabricated with other technologies. Also, simulated oscillation frequency and second harmonic suppression agree with the measured results. And, phase noise is improved due to the use of the small value of series resistor of inductor in frequency determining network plus the InGaP ledge in the HBT. The chip size is 830 x 781μm 2.
Super Performance InGap/GaAs HBT with Novel Structure
高性能新结构InGaP/GaAs异质结双极型晶体管(英文)

Bai Dafu,Liu Xunchun,Wang Runmei,Yuan Zhipeng,Sun Haifeng,
白大夫
,刘训春,王润梅,袁志鹏,孙海锋

半导体学报 , 2004,
Abstract: A kind of super performance InGaP/GaAs HBT with f T=108GHz and f max =140GHz is demonstrated.The excellent frequency performance results from the novel structure of the U shaped emitter,together with self aligned emitter and LEU(lateral etched undercut) technologies.The HBT with the novel structure shows a distinguished performance with BV CEO up to 25V.And excellent performance of low V offset of 105mV and V knee of 0 50V is great favor of low power applications.The differences due to the different structure are also compared.
C-Band 3.5W/mm InGaP/GaAs HBT Power Transistors with >40% Power-Added Efficiency
C波段3.5W/mm, PAE>40%的InGaP/GaAs HBT功率管

Shen Huajun,Chen Yanhu,Yan Beiping,Ge Ji,Wang Xiantai,Liu Xinyu,and Wu Dexin,
申华军
,陈延湖,严北平,葛霁,王显泰,刘新宇,吴德馨

半导体学报 , 2006,
Abstract: A C-band InGaP/GaAs HBT power transistor with an optimized material structure and device peripheral structure is designed and fabricated by base-emitter metal self-aligning,emitter ballasting,and an electric plated air bridge.The measured BVCBO is greater than 31V and the BVCEO is greater than 21V.At a frequency of 5.4GHz,the saturated CW output power of the fabricated HBT power transistor is more than 1.4W with a maximum power density of 3.5W/mm,and the power added efficiency is greater than 40%.
High Power-Added-Efficiency InGaP/GaAs Power HBT
高功率附加效率的InGaP/GaAs功率HBT

Zheng Liping,Yuan Zhipeng,Fan Yuwei,Sun Haifeng,Di Haocheng,Wang Suqin,Liu Xinyu,and Wu Dexin,
郑丽萍
,袁志鹏,樊宇伟,孙海锋,狄浩成,王素琴,刘新宇,吴德馨

半导体学报 , 2005,
Abstract: 采用发射极基极金属自对准工艺,成功研制出了InGaP/GaAs功率HBT.发射极尺寸为(3μm×15μm)×16的功率器件的截止频率和最高振荡频率分别为55GHz和35GHz.在片load-pull测试表明:当工作频率为1GHz时,器件工作在AB类,该功率管最大输出功率为23.5dBm,最大功率附加效率达60%,P1dB的输出功率为21dBm,对应增益为16dB,工作电压为3.5V.
The microwave large signal load line of an InGaP HBT
InGaP HBT 微波大信号负载线特性

Zhao Lixin,Jin Zhi,Liu Xinyu,
赵立新
,金智,刘新宇

半导体学报 , 2010,
Abstract: The microwave dynamic load line characteristics of an advanced InGaP HBT are investigated experimentally and analyzed at small signal level and at large signal level for microwave power amplification. Investigation results show that the dynamic load curves are not always like an elliptic curve, and the current extreme points do not locate at voltage extreme points. The dynamic load curve current extreme point lines sit at the small signal load line up to the P-3dB point, and the lines show a constant slope from a small signal up to the saturation power point. A method to calculate the realistically delivered power to load is presented which fits the test result well.
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