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An on-chip temperature compensation circuit for an InGaP/GaAs HBT RF power amplifier
一种应用于InGaP/GaAs HBT射频功率放大器的在片温度补偿电路

Li Chengzhan,Chen Zhijian,Huang Jiwei,Wang Yongping,Ma Chuanhui,Yang Hanbing,Liao Yinghao,Zhou Yong,Liu Bin,
李诚瞻
,陈志坚,黄继伟,王永平,马传辉,杨寒冰,廖英豪,周勇,刘斌

半导体学报 , 2011,
Abstract: A new on-chip temperature compensation circuit for a GaAs-based HBT RF amplifier applied to wireless communication is presented.The simple compensation circuit is composed of one GaAs HBT and five resistors with various values,which allow the power amplifier to achieve better thermal characteristics with a little degradation in performance.It effectively compensates for the temperature variation of the gain and the output power of the power amplifier by regulating the base quiescent bias current.The tempera...
X Band MMIC Power Amplifier Based on InGaP/GaAs HBT
基于InGaP/GaAs HBT的X波段MMIC功率放大器研制

Chen Yanhu,Shen Huajun,Wang Xiantai,Ge Ji,Li Bin,Liu Xinyu,Wu Dexin,
陈延湖
,申华军,王显泰,葛荠,李滨,刘新宇,吴德馨

半导体学报 , 2007,
Abstract: An X band InGaP/GaAs HBT single stage MMIC power amplifier is reported.The self-aligning InGaP/GaAs HBT process was used to fabricate the circuit.The PA circuit is biased at the class AB state.The small signal S parameter test shows that at 8~8.5GHz,the linear power gain is 8~9dB,VSWRin<2,and VSWRout<3.After optimizing the collector bias,the linear gain is improved to 9~10dB.Under an 8.5GHz CW signal power test with optimized loading conditions,the P1dB of the circuit is 29.4dBm,relevant power gain is 7.2dB,and relevant PAE is 42%.The Psat of the circuit is 30dBm.
An InGaP/GaAs HBT MIC Power Amplifier with Power Combining at the X-Band
InGaP/GaAs HBT X波段混合集成功率合成放大器的研制

Chen Yanhu,Shen Huajun,Wang Xiantai,Chen Gaopeng,Liu Xinyu,Yuan Dongfeng,Wang Zuqiang,
陈延湖
,申华军,王显泰,陈高鹏,刘新宇,袁东风,王祖强

半导体学报 , 2008,
Abstract: A MIC power amplifier with power combining based on InGaP/GaAs HBT is developed and measured for the application of the latest high power amplifier stage of the X-band.A novel InGaP/GaAs HBT power transistor with an on-chip RC stabilization network is used as the power combing cell to improve the stability of the circuit.A compact microstripe line parallel matching network is used to divide and combine the power.By biasing the amplifier at class AB:Vcc=7V,Ic=2 30mA,a maximum CW stabile output power of 28.9d...
A 3.4-3.6 GHz power amplifier in an InGaP/GaAs HBT
A 3.4-3.6GHz Power amplifier in InGaP-GaAs HBT

Hao Mingli,Zhang Zongnan,Zhang Haiying,
郝明丽
,张宗楠,张海英

半导体学报 , 2011,
Abstract: This paper presents a 3.4-3.6GHz power amplifier (PA) designed and implemented in InGaP/GaAs HBT technology. By optimizing the off-chip output matching network and designing an extra input-matching circuit on PCB, several problems are resolved, such as resonant frequency point migration, worse matching and lower gain caused by parasitics inside and outside of the chip. Under Vcc=4.3V and Vbias=3.3V, a P1dB of 27.1dBm has been measured at 3.4GHz with a PAE of 25.8%, the 2nd and 3rd harmonics are -64dBc and -51dBc, respectively. Besides, this PA shows a linear gain more than 28dB with S11<-12.4dB and S22<-7.4dB in 3.4-3.6GHz band.
Design of InGaP/GaAs HBT Microwave Power Amplifier
InGaP/GaAs HBT微波功率放大器的设计

Qian Yongxue,Liu Xunchun,
钱永学
,刘训春

半导体学报 , 2003,
Abstract: The method to extract HBT large-signal Gummel-Poon model parameters with simulated annealing algorithm is discussed.These parameters extracted are used for a design of 1900MHz two-stage class AB power amplifier with very low quiescent power consumption.The gain of the P _A is 26dB.Its output 1dB compression point is 28dBm.At this point the power-added efficiency and ACPR are 38 8%,-30 5dBc respectively.All harmonic powers are below -40dBc when P _ out is below 28dBm.
A Simplified VBIC Model and InGaP/GaAs HBT Wideband Amplifier Design
一种简化的VBIC模型和InGaP/GaAs HBT宽带放大器设计

Sun Lingling,Liu Jun,
孙玲玲
,刘军

半导体学报 , 2005,
Abstract: 采用一种新的简化VBIC模型对单、多指InGaP/GaAs HBT器件进行建模.测量和模型仿真I-V特性及其在多偏置条件下多频率点S参数对比结果表明,DC~9GHz频率范围内,简化后的模型可对InGaP/GaAs HBT交流小信号特性进行较好的表征.利用建立的模型设计出DC~9GHz两级直接耦合宽带放大器,该放大器增益达到19dB,输入、输出回波损耗分别低于-10dB和-8dB.
Self-Aligned InGaP/GaAs HBT Monolithic Transimpedance Amplifier
自对准InGaP/GaAs HBT单片集成跨阻放大器

王延锋,孙海峰,刘新宇,和致经,吴德馨
半导体学报 , 2003,
Abstract: 对自对准 In Ga P/ Ga As HBT单片集成跨阻放大器进行了研究 .采用发射极金属做腐蚀掩膜并利用 Ga As腐蚀各向异性的特点来完成 BE金属自对准工艺 ,最终制作出的器件平均阈值电压为 1.15 V,单指管子电流增益为5 0 ,发射极面积 4μm× 14μm的单管在 IB=2 0 0μA和 VCE=2 V偏压条件下截止频率达到了 4 0 GHz.设计并制作了直接反馈和 CE- CC- CC两种单片集成跨阻放大器电路 ,测量得到的跨阻增益在 3d B带宽频率时分别为 5 0 .6 d BΩ和 4 5 .1d BΩ ,3d B带宽分别为 2 .7GHz和 2 .5 GHz,电路最小噪声系数分别为 2 .8d B和 3.2 d B.
A Monolithic InGaP/GaAs HBT Power Amplifier Design with Improved Gain Flatness
改善增益平坦度的新型InGaP/GaAs HBT功率放大器单片设计

Zhu Min,Yin Junjian,Zhang Haiying,
朱旻
,尹军舰,张海英

半导体学报 , 2008,
Abstract: A monolithic power amplifier designed for 3GHz communication applications with improved gain flatness is studied based on InGaP/GaAs hetero-junction bipolar transistor technology in a commercial foundry.To improve gain flatness in a simple way,no external component was used in the real circuit except the decoupled bypass capacitors and RF choke.The measured linear gain is 23dB with gain flatness of ±0.25dB,satisfying the design goal and matching well with simulation results.This 2-stage power amplifier can deliver 31dBm linear output power and 44% power-added efficiency in the 400MHz bandwidth.The successful design with improved gain flatness is the result of superior distortion compensation and a coil model used as the RF choke.
A Dual-Band SiGe HBT Frequency-Tunable and Phase-Shifting Differential Amplifier Employing Varactor-Loaded, Stacked LC Resonators  [PDF]
Kazuyoshi Sakamoto,Yasushi Itoh
International Journal of Microwave Science and Technology , 2012, DOI: 10.1155/2012/157971
Abstract: A dual-band SiGe HBT frequency-tunable and phase-shifting differential amplifier has been developed for the future active phased array antennas with a multiband, multibeam, and multitarget tracking operation. The amplifier uses varactor-loaded, stacked LC resonators in the design of the output circuit in order to provide frequency-tunable and phase-shifting capabilities for dual frequencies. By utilizing the varactor-loaded LC resonator, which has a variable resonant frequency and a large insertion phase variation, frequency-tunable and phase-shifting performances become available. Moreover, by using the stacked configuration, the frequency and insertion phase can be varied independently for dual frequencies. A dual-band SiGe HBT differential amplifier has achieved a lower-frequency tuning range of 0.56 to 0.7?GHz for a higher fixed frequency of 0.97?GHz as well as a higher-frequency tuning range of 0.92 to 1.01?GHz for a lower fixed frequency of 0.63?GHz. A lower-frequency phase variation of 99° and a higher-frequency phase variation of 90.3° have been accomplished at 0.63 and 0.97?GHz, respectively. This is the first report on the dual-band differential amplifier with frequency-tunable and phase-shifting capabilities. 1. Introduction Recent and future wireless systems require a wide range of data rates over several frequency bands, and thus adaptive and reconfigurable transceivers become necessary to support high performance and flexibility [1]. Meanwhile, microwave and millimeter-wave sensors and radar systems require multiband, multibeam scanning phased array antennas as well as a multi-target tracking capability [2]. To address these requirements, multifunction capabilities are strongly required. Especially multiband amplification, frequency tunability, gain and phase control are crucial for realizing adaptive and reconfigurable phased array systems. Most of the traditional multiband amplifiers, however, provide a single function [3]. Meanwhile, the authors have presented multiband amplifiers with frequency-tunable as well as gain control capabilities for bandpass and bandstop types [4, 5]. To enhance the operational capability, a novel design approach is proposed in this paper for the multiband low-noise differential amplifier with frequency-tunable and phase-shifting capabilities. In order to realize both frequency-tunable and phase-shifting performances, varactor-loaded LC resonators are used in the design of the output circuit of the differential amplifier. LC resonators are widely used in the reflection type phase shifter because they provide
Self-Aligned GaInP/GaAs HBT Device
自对准GaInP/GaAs HBT器件

Qian Yongxue,Liu Xunchun,Wang Runmei,Shi Ruiying,
钱永学
,刘训春,王润梅,石瑞英

半导体学报 , 2002,
Abstract: A method to fabricate self-aligned GaInP/GaAs HBT devices is presented.With this method,f_t and f_max of the device can reach 54GHz and 71GHz respectively.This process is simple compared with othe r methods.The theoretical analysis about how to improve the RF characteristics o f these devices is also described.
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