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Multi-Buffer Layers Effect on Characteristic of GaN Grown by MOCVD
多缓冲层对MOCVD生长的GaN性能的影响

Lu Min,Fang Huizhi,Li Zilan,Lu Shu,Yang Hua,Zhang Bei,Zhang Guoyi,
陆敏
,方慧智,黎子兰,陆曙,杨华,章蓓,张国义

半导体学报 , 2004,
Abstract: GaN films were grown with different multi buffer layers by MOCVD.X ray diffraction and photoluminence were applied to study the characteristic of GaN films.Compared to GaN film with conventional single low temperature buffer layer,the FWHM of (0002) XRD and PL of GaN films with different multi buffer layers were narrowed.It indicated that these multi buffer layers techniques could improve crystal quality of GaN films.
GaN Growth on LiGaO2(001) with MOCVD
用MOCVD法在LiGaO2(001)上生长GaN的研究

YANG Wei-Qiao,GAN Fu-Xi,DENG Pei-Zhen,XU Jun,LI Shu-Zhi,ZHANG Rong,
杨卫桥
,干福熹,邓佩珍,徐军,李抒智,张荣

无机材料学报 , 2003,
Abstract: LiGaO2 is the most promising substrate newly found for the epitaxy of GaN. Mirror-like GaN(0001) films were grown on LiGaO2(001) substrates by using MOCVD. The GaN films and substrates were investigated by means of AFM, XRD and X-ray double-crystal diffraction. The result shows that a preferable quality of GaN(0001) films can be grown on LiGaO2(001) substrates by using MOCVD. LiGaO2 being unstable under the conditions of MOCVD which should be operated at high temperature and in deoxidize ambience, LiGaO2 substrate cracks appear easily in the growth process, but no phase changes.
Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD
MOCVD制备过掺杂GaN基稀磁半导体微结构研究

Tao Zhikuo,Zhang Rong,Xiu Xiangqian,Cui Xugao,Li Li,Li Xin,Xie ZiLi,Zheng Youdou,Zheng Rongkun,Simon P Ringer,
陶志阔
,张荣,修向前,崔旭高,李丽,李鑫,谢自力,郑有炓,郑荣坤,Simon P Ringer

半导体学报 , 2012,
Abstract: We have grown transition metal (Fe, Mn) doped GaN thin films on c-oriented sapphires by metal organic chemical vapor deposition (MOCVD). By varying flow of metal precursor, series of samples with different ion concentration are synthesized. Microstructural properties are characterized by high-resolution transmission electron microscope (HRTEM). For Fe over-doped GaN samples, hexagonal Fe3N clusters are observed with Fe3N(0002) parallel to GaN(0002) while for Mn over-doped GaN, hexagonal Mn6N2.58 phase are observed with Mn6N2.58(0002) parallel to GaN(0002). Meantime, with higher concentration ions doping into the lattice matrix, the partial lattice orientation is distorted, leading to the tilt of GaN (0002) planes. Magnetic measurement show that the homogeneous Fe doped GaN samples are ferromagnetic and Mn doped GaN are not ferromagnetic. The magnetization of Fe over-doped GaN sample promotes a lot which is ascribed to the participation of ferromagnetic iron and Fe3N while Mn over-doped sample show very weak ferromagnetic behavior which may probably originate from Mn6N2.58.
THE UV PHOTOCONDUCTIVITY OF n-TYPE GaN FILMSDEPOSITED BY MOCVD
用MOCVD方法制备的n型GaN薄膜紫外光电导

ZHANG DE-HENG,LIU YUN-YAN,ZHANG DE-JUN,
张德恒
,刘云燕,张德骏

物理学报 , 2001,
Abstract: This paper studies the UV photoconductivity for non-doped and weakly Mg doped n-type GaN films deposited by MOCVD. It was observed that these n-type samples have notable UV photoresponse and the relaxation time of the photoresponse is relatively short.In the weak intensity range, the photoresponse decreases linearly with the light intensity and the relaxation time of the photoresponse becomes larger.
Optical and Magnetic Properties of Fe-Doped GaN Diluted Magnetic Semiconductors Prepared by MOCVD Method

TAO Zhi-Kuo,ZHANG Rong,CUI Xu-Gao,XIU Xiang-Qian,ZHANG Guo-Yu,XIE Zi-Li,GU Shu-Lin,SHI Yi,ZHENG You-Dou,

中国物理快报 , 2008,
Abstract: Fe-doped GaN thin films are grown on c-sapphires by metal organic chemical vapour deposition method (MOCVD). Crystalline quality and phase purity are characterized by x-ray diffraction and Raman scattering measurements. There are no detectable second phases formed during growth and no significantdegradation in crystalline quality as Fe ions are doped. Fe-related optical transitions are observed in photoluminescence spectra. Magnetic measurements reveal that the films show room-temperature ferromagnetic behaviour. The ferromagnetism may originate from carrier-mediated Fe-doped GaN diluted magnetic semiconductors or nanoscale iron clusters and Fe--N compounds which we have not detected.
MOCVD Process Simulation of GaN
MOCVD生长GaN材料的模拟

GUO Wenping,Shao Jiaping,Luo Yi,Sun Changzheng,HAO Zhibiao,Han Yanjun,
郭文平
,邵嘉平,罗毅,孙长征,郝智彪,韩彦军

半导体学报 , 2005,
Abstract: 基于计算流体力学在三维空间中模拟了水平行星式金属有机物化学气相沉积(MOCVD)反应器生长GaN材料的流场、热场、反应物与生成物的分布以及材料生长速率等重要物理参数.计算结果与同样条件下的实验结果吻合程度相当高,表明化学反应机理和计算方法是非常可靠的,能够以此来模拟和指导GaN基材料的MOCVD生长工艺.研究并讨论了GaN的MOCVD生长中输入Ⅴ/Ⅲ比、进气口双束流上下比、总流量、反应室压力等工艺条件对局域Ⅴ/Ⅲ比的影响.
A new method to grow high quality GaN film by MOCVD
一种外延生长高质量GaN薄膜的新方法

Peng Dong-Sheng,Feng Yu-Chun,Wang Wen-Xin,Liu Xiao-Feng,Shi Wei,Niu Han-Ben,
彭冬生
,冯玉春,王文欣,刘晓峰,施 炜,牛憨笨

物理学报 , 2006,
Abstract: Patterned c-plane sapphire substrate is prepared by chemical etching. GaN films are grown by LP-MOCVD on surface treated sapphire substrate and common c-plane sapphire substrate. The structure and properties of the GaN films are analyzed by high-resolution double crystal X-ray diffraction(DCXRD), scanning electron microscope(SEM) and atomic force microscope(AFM).The results indicate that the quality of GaN film grown on sapphire substrate prepared by surface treatment is superior to that grown on common c-plane sapphire substrate. High-resolution double crystal X-ray diffraction shows that for the GaN grown on surface treated sapphire substrate,the (0002) and (1012) reflections have full-width at half-maximum as low as 208.80arcsec and 320.76 acrsec, respectively. The shortcomings of procedure complexity and high crystallographic tilt in conventional lateral epitaxial overgrowth are overcome by using the new method.
MOCVD生长GaN和GaN∶Mg薄膜的对比研究
冯倩,王峰祥,郝跃
红外与毫米波学报 , 2004,
Abstract: 对在SiC衬底上采用MOCVD方法制备的GaN和GaN :Mg薄膜进行X射线衍射 (XRD)、扫描电镜 (SEM)和拉曼散射光谱的对比研究发现 :两种样品均处于张力作用之下 ,但是GaN∶Mg样品却由于Mg的掺杂会在样品中引入更多的缺陷和位错加剧薄膜的无序化程度 ,致使薄膜质量变差 ;其次因为Mg原子半径比Ga原子半径大 ,所以当Mg替代Ga以后会引发压力应力 ,从而使薄膜张力减小 ,最后通过计算说明对于GaN :Mg样品而言 ,除了载流子以外 ,薄膜质量同样也会对A1(LO)模式产生影
MOCVD生长GaN和GaN:Mg薄膜的对比研究  [PDF]
红外与毫米波学报 , 2004,
Abstract: 对在SiC衬底上采用MOCVD方法制备的GaN和GaN:Mg薄膜进行X射线衍射(XRD)、扫描电镜(SEM)和拉曼散射光谱的对比研究发现:两种样品均处于张力作用之下,但是GaN:Mg样品却由于Mg的掺杂会在样品中引入更多的缺陷和位错加剧薄膜的无序化程度,致使薄膜质量变差;其次因为Mg原子半径比Ga原子半径大,所以当Mg替代Ga以后会引发压力应力,从而使薄膜张力减小,最后通过计算说明对于GaN:Mg样品而言,除了载流子以外,薄膜质量同样也会对A1(LO)模式产生影响.
Surface morphology of [11-20] a-plane GaN growth by MOCVD on [1-102] r-plane sapphire
MOCVD生长的[ 1-102]r面蓝宝石衬底上的[11-20 ]a面GaN表面形貌研究

Xu Shengrui,Hao Yue,Duan Huantao,Zhang Jincheng,Zhang Jinfeng,Zhou Xiaowei,Li Zhiming,Ni Jinyu,
许晟瑞
,郝跃,段焕涛,张进城,张金凤,周晓伟,李志明,倪金玉

半导体学报 , 2009,
Abstract: Nonpolara-plane 11-20] GaN has been grown onr-plane 1-102] sapphire by MOCVD, and investigated by high resolution X-ray diffraction and atomic force microscopy. As opposed to thec-direction, this particular orientation is non-polar, and it avoids polarization charge, the associated screening charge and the consequent band bending. Both low-temperature GaN buffer and high-temperature AlN buffer are used fora-plane GaN growth on r-plane sapphire, and the triangular pits and pleat morphology come forth with different buffers, the possible reasons for which are discussed. The triangular and pleat direction are also investigated. A novel modulate buffer is used for a-plane GaN growth onr-plane sapphire, and with this technique, the crystal quality has been greatly improved.
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