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Characterization of ALN thin films deposited by DC reactive magnetron sputtering
García-Méndez, M.;Morales-Rodríguez, S.;Machorro, R.;De La Cruz, W.;
Revista mexicana de física , 2008,
Abstract: a set of aln thin-films was prepared by reactive magnetron sputtering at room temperature. the purpose of this work was to study the effect of oxygen impurities on the structural and optical properties of aln films. the structural and optical properties of the resulting films were characterized using x-ray diffraction (xrd) and spectroscopic ellipsometry, respectively. depending on the deposition conditions, films can be hexagonal (wurtzite, p633m3) or cubic (zinc blende, fm3m) in their microstructure. from the optical measurements, the ellipsometric parameters (ψ,δ) and the real refractive index as a function of energy were obtained. from the ellipsometric measurements, a model of the lorentz single-oscillator was employed to estimate the optical band gap, eg.
Correlation between structure and hardness of magnetron sputtering deposited CNx films
Weitao Zheng,Haibo Li,Yuming Wang,J. -E. Sundgren
Chinese Science Bulletin , 1999, DOI: 10.1007/BF02886148
Abstract: Carbon nitride films are deposited on Si (001) substrates by reactive dc magnetron sputtering graphite in a pure N2discharge. The structure of carbon nitride films has been probed using Fourier transformation infrared, near edge X-ray absorption fine structure (NEXAFS) and high resolution electron microscopy (HREM), and the hardness has been evaluated in nanoin-dentation experiments. FTIR spectra show that N atoms are bound to sp1, sp2, and sp3 hybridized C atoms. Cls NEXAFS spectra show that the intensity of π resonance is the lowest for the film grown at substrate temperatureT s = 350°C, with a turbostratic-like structure and high hardness, while it is the highest for the film grown atT s = 100°C, with an amorphous structure and low hardness. The correlation between the structure and hardness of carbon nitride films has been discussed.
Preparation and Properties of SnO2 Film Deposited by Magnetron Sputtering
Dan Leng,Lili Wu,Hongchao Jiang,Yu Zhao,Jingquan Zhang,Wei Li,Lianghuan Feng
International Journal of Photoenergy , 2012, DOI: 10.1155/2012/235971
Abstract: Tin oxide SnO2 films were prepared by RF magnetron sputtering. The effects of oxygen partial pressure percentage on the SnO2 property have been investigated to obtain relatively high-resistivity SnO2 films which could be used as buffer layers to optimize the performance of CdTe/CdS solar cells. The oxygen partial pressure percentage varied in the range of 1%~10%. The results show that the introduction of oxygen would suppress the deposition and growth of SnO2 films. Electrical measurement suggests that the film resistivity decreases with the increase of oxygen pressure. The SnO2 films with resistivity of 232 Ω cm were obtained in pure Ar atmosphere. All SnO2 films fabricated with different oxygen partial pressure percentage have almost the same optical band gap.
Photocatalytic Property of TiO2 Films Deposited by Pulsed DC Magnetron Sputtering
Photocatalytic Property of TiO_2 Films Deposited by Pulsed DC Magnetron Sputtering

Wenjie ZHANG,Shenglong ZHU,Ying LI,Fuhui WANG,
Wenjie ZHANG
,Shenglong ZHU,Ying LI and Fuhui WANG State Key Laboratory for Corrosion and Protection,Institute of Metal Research,Chinese Academy of Sciences,Shenyang,China

材料科学技术学报 , 2004,
Abstract: TiO2 thin films were prepared by DC magnetron sputtering with the oxygen flow rate higher than the threshold. The film deposited for 5 h was of anatase phase with a preferred orientation along the <220> direction, but the films deposited for 2 and 3 h were amorphous. The transmittance and photocatalytic activity of the TiO2 films increased constantly with increasing film thickness. When the annealing temperature was lower than 700℃, only anatase grew in the TiO2 film. TiO2 phase changed from anatase to rutile when the annealing temperature was above 800℃. The photocatalytic activity decreased with increasing annealing temperature.
Characterization of ZnO:Al Films Deposited on Organic Substrate by r.f. Magnetron Sputtering
Characterization of ZnO:Al Films Deposited on Organic Substrate by r.f. Magnetron Sputtering

Jin MA,Xiaotao HAO,Shiyong ZHANG,Honglei MA,
Jin MA
,Xiaotao HAO Shiyong ZHANG and Honglei MA School of Physics and Microelectronics,Institute of Optoelectronic Materials & Devices,Shandong University,Jinan,China Institute of Science,Chang An University,Xi''''an,China

材料科学技术学报 , 2003,
Abstract: Transparent conducting Al-doped zinc oxide (ZnO:AI) films with good adhesion have been deposited on polyimide thin film substrates by r.f. magnetron sputtering technique at low substrate temperature (25-180℃). The structural, optical and electrical properties of the deposited films were investigated. High quality films with electrical resistivity as low as 8.5×10-4 Ω·cm and the average transmittance over 74% in the wavelength range of the visible spectrum have been obtained. The electron carrier concentrations are in the range from 2.9×1020 to 7.1×1020 cm-3 with mobilities from 4 to 8.8 cm2 V-1s-1. The densities of the films are in the range from 4.58 to 5.16 g/cm-3.
Structural and Optical Properties of Aluminum Nitride Thin Films Deposited by Pulsed DC Magnetron Sputtering  [PDF]
R. K. Choudhary,P. Mishra,A. Biswas,A. C. Bidaye
ISRN Materials Science , 2013, DOI: 10.1155/2013/759462
Abstract: Aluminum nitride thin films were deposited on Si (100) substrate by pulsed DC (asymmetric bipolar) reactive magnetron sputtering under variable nitrogen flow in a gas mixture of argon and nitrogen. The deposited film was characterized by grazing incidence X-ray diffraction (GIXRD), atomic force microscope (AFM), spectroscopic ellipsometry, and secondary ion mass spectroscopy (SIMS). GIXRD results have shown (100) reflection of wurtzite AlN, whereas AFM micrographs have revealed very fine grained microstructure with average roughness in the range 6–8?nm. Spectroscopic ellipsometry measurements have indicated the band gap and refractive index of the film in the range 5.0–5.48?eV and 1.58–1.84, respectively. SIMS measurement has indicated the presence of oxygen in the film. 1. Introduction Aluminum nitride, a III-V family compound, has excellent combination of physical, chemical, and mechanical properties. High-quality films of aluminum nitride have been used in various devices and sensors including the optical and optoelectronic devices. As far as the optical and optoelectronic applications are concerned, wide band gap (~6.2?eV) along with high-refractive index (~2.0) and low-absorption coefficient (<10?3) makes AlN a very attractive material for these applications [1]. In addition to this, thermal and chemical stability of AlN films make it suitable for applications in difficult environment. Today, AlN films/coatings have been grown by several methods which include pulsed laser deposition [2], reactive molecular beam epitaxy [3], vacuum arc/cathodic arc deposition [4], DC/RF reactive sputtering [5–7], ion beam sputtering [8], metal-organic chemical vapor deposition (MOCVD) [9], and miscellaneous [10] other techniques. Due to simplicity, reproducibility, ease of scaling up, and lower cost, magnetron sputtering is one of the common methods for growing AlN films for various applications. As already known, it is difficult to obtain good quality insulating films by DC magnetron sputtering, and RF magnetron sputtering has the disadvantage of lower deposition rate and higher cost of the RF power, whereas pulsed DC magnetron sputtering method has the advantage of higher deposition rate and it is suitable for producing good quality cost-effective dielectric films [11, 12]. Properties of AlN films depend upon the crystal structure, crystal orientation, microstructure, and chemical composition, which in turn depend upon the deposition conditions such as sputtering power, pulse frequency, duty cycle, growth temperature, nitrogen/argon flow ratio, and sputtering gas
Vanadium oxide thin films deposited on indium tin oxide glass by radio-frequency magnetron sputtering
Vanadium oxide thin films deposited on indium tin oxide glass by radio—frequency magnetron sputtering

Wang Xue-Jin,Fei Yun-Jie,Xiong Yan-Yun,Nie Yu-Xin,Feng Ke-An,Li Lin-De,
王学进
,费允杰,熊艳云,聂玉昕,冯克安,李林德

中国物理 B , 2002,
Abstract: Highly oriented VO2(B), VO2(B) + V6O13 films were grown on indium tin oxide glass by radio-frequency magnetron sputtering. Single phase V6O13 films were obtained from VO2(B) +V6O13 films by annealing at 480℃ in vacuum. The vanadium oxide films were characterized by x-ray diffraction and x-ray photoelectron spectra (XPS). It was found that the formation of vanadium oxide films was affected by substrate temperature and annealing time, because high substrate temperature and annealing were favourable to further oxidation. Therefore, the formation of high valance vanadium oxide films was realized. The V6O13 crystalline sizes become smaller with the increase of annealing time. XPS analysis revealed that the energy position for all the samples was almost constant, but the broadening of the V2p3/2 line of the annealed sample was due to the smaller crystal size of V6O13.
Study of magnetic iron nitride thin films deposited by high power impulse magnetron sputtering  [PDF]
Akhil Tayal,Mukul Gupta,Ajay Gupta,V. Ganesan,Layanta Behera,Surendra Singh,Saibal Basu
Physics , 2014,
Abstract: In this work, we studied phase formation, structural and magnetic properties of iron-nitride (Fe-N) thin films deposited using high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (dc-MS). The nitrogen partial pressure during deposition was systematically varied both in HiPIMS and dc-MS. Resulting Fe-N films were characterized for their microstructure, magnetic properties and nitrogen concentration. We found that HiPIMS deposited Fe-N films show a globular nanocrystalline microstructure and improved soft magnetic properties. In addition, it was found that the nitrogen reactivity impedes in HiPIMS as compared to dc-MS. Obtained results can be understood in terms of distinct plasma properties of HiPIMS.
Characterization of TiAlSiON Coatings Deposited by Plasma Enhanced Magnetron Sputtering: XRD, XPS, and DFT Studies  [PDF]
A. S. Kamenetskih,A. I. Kukharenko,E. Z. Kurmaev,N. A. Skorikov,N. V. Gavrilov,S. O. Cholakh,A. V. Chukin,V. M. Zainullina,M. A. Korotin
Physics , 2014,
Abstract: The results of characterization of TiAlSiON hard coatings deposited on ferric-chromium AISI 430 stainless steel by plasma enhanced magnetron sputtering are presented. The coating with maximum hardness (of 45 GPa) was obtained at the following optimal values of elemental concentrations: Si ~5 at.%, Al ~15 at.%, and Ti ~27 at.%. The elastic modulus of the coating was 590 GPa. The reading of gaseous mixture (Ar-N2) pressure was 1*10-3 Torr and the reading of partial pressure of oxygen (O2) was 1*10-5 Torr. The X-ray diffraction (XRD) measurements showed the presence of Ti(Al)N. High-energy resolved XPS spectra of core levels revealed the formation of Ti-N, Ti-O-N, Si-N and Al-O-N bonds. Comparison of XPS valence band spectra with specially performed density functional theory calculations for two ordered and few disordered TiN1-xOx (0 =< x <= 1) demonstrates that a Ti(Al)OxNy phase is formed on the surface of AISI430 steel upon the plasma enhanced magnetron sputtering, which provides this material with a good combination of high hardness and improved oxidation resistance.
Microhardness of Ti-Al-Si-N Coatings Deposited by DC Reactive Magnetron Sputtering  [PDF]
Gabriela Strnad,Dominic Biro,Ioan Vida-Simiti
Scientific Bulletin of the ''Petru Maior" University of T?rgu Mure? , 2009,
Abstract: (Ti,Al,Si)N coatings were deposited on HSS or silicon substrates by DC reactive UM magnetron sputtering. The target was Ti-Al-Si (50 at.% Al, 25 at.% Ti, 25 at.% Si). There were deposited several coatings by varying the nitrogen flow rate. The microhardness of (Ti,Al,Si)N coatings was measured using a CV-400 AAT hardness tester and was found in 4...24 GPa range. XTEM investigation showed the columnar microstructure for coatings deposited in the absence of reactive gas and the nanocristallyne microstructure for (Ti,Al,Si)N coatings.
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