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(CdTe)_m(ZnTe)_n-ZnTe多量子阱结构的静压光致发光和共振喇曼散射研究
李国华,韩和相,汪兆平,李杰,何力,袁诗鑫
半导体学报 , 1993,
Abstract: (CdTe)_m(ZnTe)_n-ZnTe多量子阱是由(CdTe)_m(ZnTe)_n短周期超晶格限制在ZnTe势垒中组成的新结构。它可以提高CdTe/ZnTe异质生长的临界厚度。静压下的光致发光研究表明加压后(CdTe)_m(ZnTe)_n超晶格和ZnTe势垒层的光致发光峰分别以8.80和 9.47meV/kbar的速率向高能移动。利用这种静压下的带隙变化,实现了与514.5和488.0nm激发光的共振喇曼散射。观察到高达4阶的多声子共振喇曼散射。并发现与(CdTe)_m(ZnTe)_n超晶格共振时的类ZnTe LO声子模频率比与ZnTe热垒共振时的ZnTe LO声子频率低1.4cm~(-1)。反映了在(CdTe)_m(ZnTe)_n超晶格中LO声子的局域效应。
CdTe/ZnTe应变量子阱的静压光致发光研究,
李国华,韩和相,汪兆平,李杰,何力,袁诗鑫
半导体学报 , 1993,
Abstract: 在77K和0—50kbar静压范围内研究了阱宽分别为m=4.8,12个单原子层的(CdTe)_m/(ZnTe)_n应变量子阱的静压光致发光。在常压下,m=8和12的量子阱的发光峰比m=4的量子阱的发光峰显著变宽。表明在这两个阱中应变已发生弛豫。用Kronig-Penney模型计算的峰值能量证实了这一点。在所测静压范围内峰宽无明显增加。它们的压力系数从m=12的6.81meV/kbar增加到m=4的8.24meV/kbar。计算表明,势垒高度随压力增加而增加是使压力系数随阱宽减小而增加的主要原因。
ZnTe/CdTe thin-film heterojunctions  [PDF]
M.M. Kolesnyk,A.S. Opanasyuk,N.V. Tyrkusova,S.N. Danilchenko
Journal of Nano- and Electronic Physics , 2009,
Abstract: In this work we have studied the structural and electrophysical properties of the ZnTe/CdTe heterojunctions, obtained by the method of thermal evaporation in quasi-closed volume. Investigations allowed to define the films structural parameters, such as texture, lattice constant, sizes of grains and coherent-scattering domains, micro-deformation level, and their dependence on the conditions of films production as well. Electrophysical investigations allowed to define the charge-transport mechanism in heterojunction.
ROOM TEMPERATURE RAMAN SCATTERING IN CdTe/ZnTe SUPERLATTICE GROWN BY MOLECULAR BEAM EPITAXY
分子束外延生长CdTe/ZnTe超晶格室温喇曼散射

ZHANG XIAOFENG,
张晓峰
,姚文华

红外与毫米波学报 , 1991,
Abstract: Raman scattering measurements of CdTe/ZnTe superlattices (SL) grown by molecular beam epitaxy (MBE) have been reported for the first time at room temperature and under off-resonance condition. The lowest confined longitudinal optical (LO) phonon modes of CdTe and ZnTe are observed. Theoretical frequeney shift in SL, accounting both for strain and confinement, is calculated accurately and in good agreement with the observed shift of ZnTe LO phonon. It is indicated especially that when the individual layer thickness of CdTe and ZnTe is less than 2nm, the confinement effect of phonon frequency shift can not be neglected.
谷胱甘肽稳定水溶性CdTe/ZnTe量子点的制备与表征  [PDF]
徐昕,孔毅飞,贺蓉,吉佳佳,崔大祥
化学学报 , 2011,
Abstract: 用还原型谷胱甘肽(GSH)作为稳定剂,合成了水溶性的CdTe/ZnTe核壳结构的半导体量子点.考察了Zn/Cd反应物配比及GSH用量对CdTe/ZnTe量子点的性能影响.用高分辨透射电子显微镜(HRTEM)和X射线粉末衍射(XRD)光谱对CdTe和CdTe/ZnTe的形貌和晶体结构进行了表征.荧光光谱结果表明,核壳结构的CdTe/ZnTe量子点比单一的CdTe量子点具有更高的荧光量子产率和更好的光活化性能.
Photoluminescence Spectroscopy of CdTe/ZnTe Self-Assembled Quantum Dots  [PDF]
Neboj a Rom evi ,Maja Rom evi ,Radmila Kosti ,Du anka Stojanovi ,Aleksandra Milutinovi ,Jelena Traji ,Grzegorz Karczewski,Robert Galazka
International Journal of Photoenergy , 2009, DOI: 10.1155/2009/358790
Abstract: We present photoluminescence (PL) measurements of two different, 3 monolayers and 12 monolayers (ml), CdTe self-assembled quantum dot (SAQD) samples. The spectra were recorded in the temperature range 20 K–300 K, with photoexcitation over the ZnTe barrier layer. PL spectra displayed two main emission bands. High-energy PL emission (E1) is ZnTe LO like phonon- (ωLO = 204.2 cm−1 (3 ml), ωLO = 207.3 cm−1 (12 ml)) assisted deexcitation. Dominant low-energy band (E2) presents the direct deexcitation to ground state of the CdTe quantum dots.
分子束外延生长CdTe/ZnTe超晶格室温喇曼散射  [PDF]
红外与毫米波学报 , 1991,
Abstract: 首次报道了室温和非共振条件下,分子束外延(MBE)生长的CdTe/ZnTe超晶格的喇曼散射测量和分析。观察到最低级次的CdTe和ZnTe纵光学声子限制模,并用应力和限制效应精确计算了频移,得到的ZnTe纵光学声子频移理论值与实验结果符合得较好。特别指出,当CdTe和ZnTe层厚小于2nm时,声子频移的限制效应不可忽略,对所测样品的喇曼全谱作了分析。
Size and temperature effects on electric properties of CdTe/ZnTe quantum rings

Woo-Pyo Hong,Seoung-Hwan Park,

中国物理 B , 2011,
Abstract: The electronic properties of CdTe/ZnTe quantum rings (QRs) are investigated as functions of size and temperature using an eight-band strain-dependent k·p Hamiltonian. The size effects of diameter and height on the strain distributions around the QRs are studied. We find that the interband transition energy, defined as the energy difference between the ground electronic and the ground heavy-hole subbands, increases with the increasing QR inner diameter regardless of the temperature, while the interband energy decreases with the increasing QR height. This is attributed to the reduction of subband energies in both the conduction and the valence bands due to the strain effects. Our model, in the framework of the finite element method and the theory of elasticity of solids, shows a good agreement with the temperature-dependent photoluminescence measurement of the interband transition energies.
Lyman spectra of holes bound to Cu, Ag, and Au acceptors in ZnTe and CdTe  [PDF]
Gang Chen,I. Miotkowski,A. K. Ramdas
Physics , 2009,
Abstract: The group IB impurities (Cu, Ag, and Au) incorporated into II-VI zinc blende hosts of ZnTe and CdTe exhibit well resolved excitation lines followed by a photoionization continuum in their infrared absorption spectra. They are associated with transitions from a "1s-like" ground state to various "p-like" excited state characteristic of a hole bound to a Coulomb center. Their spacing agree well with those predicted in the effective mass theory for single acceptors as expected for group IB elements substitutionally replacing the group IIB cations of the host. The occurrence of the simultaneous excitation of the Lyman transitions in combination with the zone center longitudinal optical phonon and hence lying in the photoionization continuum and displaying Fano-like asymmetries are features described and interpreted.
First principles study of rare earth doped in ZnTe used for CdTe solar cell back contact layer
稀土掺杂CdTe太阳电池背接触层ZnTe的第一性原理研究

Xia Zhong-Qiu,Li Rong-Ping,
夏中秋
,李蓉萍

物理学报 , 2012,
Abstract: In consideration of the preparation of CdS/CdTe solar cell back contact layer, the band structure and the density of states of undoped and (Y, Gd) doped in ZnTe were caculated from the plane wave ultra soft pseudo potential method based on density functional theory and generalized gradient approximation. We acquired the system total energy and lattice parameter. As a result, the structural stability improve after doping, the lattice match between ZnTe and CdTe are better when Y doped. (Y, Gd) doped make the ZnTe semiconductor degeneration. Compared with Gd, the electronic effective mass of ZnTe doped with Y are lighter. The carrier concentration order of magnitude in different doping system are same. We analysed the influence on ZnTe used for back contact layer when doped with (Y, Gd).
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