oalib
匹配条件: “” ,找到相关结果约100条。
列表显示的所有文章,均可免费获取
第1页/共100条
每页显示
Effects of seed layer on the performance of microcrystalline silicon germanium solar cells
种子层对微晶硅锗太阳电池的影响

Cao Yu,Zhang Jianjun,Li Tianwei,Huang Zhenhu,Ma Jun,Yang Xu,Ni Jian,Geng Xinhua,Zhao Ying,
曹宇
,张建军,李天微,黄振华,马峻,杨旭,倪牮,耿新华,赵颖

半导体学报 , 2013,
Abstract: 采用射频等离子体增强化学气相沉积技术,沉积一层种子层作为生长微晶硅锗本征层的起始层。研究了不同种子层对微晶硅锗本征层结构和对微晶硅锗太阳电池性能的影响。结果表明,将种子层应用到微晶硅锗电池中,可以显著提高电池的短路电流密度和填充因子,使微晶硅锗电池即使在本征层锗含量为30%的情况下,同样可以获得与微晶硅电池一样的短波响应。最后,经过优化制备出了初始效率为7.05%的微晶硅锗单结太阳电池。
Investigation of microcrystalline silicon germanium prepared by hydrogen and helium gas mixture diluted VHFPA-RTCVD
H2,He混合稀释生长微晶硅锗薄膜

Zhang Li-Ping,Zhang Jian-Jun,Zhang Xin,Shang Ze-Ren,Hu Zeng-Xin,Zhang Ya-Ping,Geng Xin-Hua,Zhao Ying,
张丽平
,张建军,张鑫,尚泽仁,胡增鑫,张亚萍,耿新华,赵颖

物理学报 , 2008,
Abstract: 采用H2,He混合气体稀释等离子辅助反应热化学气相沉积法生长微晶硅锗薄膜,并在生长过程中对等离子体进行光发射光谱在线监测.结果表明:混合气体稀释法可以有效提高等离子体中的原子氢数目,降低等离子体中的电子温度;用XRD和光暗电导率表征样品的微结构和光电特性时发现,通过优化混合稀释气体中He和H2气体的比例,能够减少薄膜中的缺陷态,促进薄膜<220>择优取向生长,有效改善微晶硅锗薄膜结构,提高光电吸收性能.
INFRARED ABSORPTION OF OXYGEN IN SILICON AND GERMANIUM AT LOW TEMPERATURES
硅、锗中氧的低温红外吸收

Xu Zhen-ji,Chen Yu-zhang,Jiang De-sheng,Song Chun-ying,Li He-cheng,Song Xiang-fang,Ye Yi-ying,
许振嘉
,陈玉璋,江德生,宋春英,李贺成,宋祥芳,叶亦英

物理学报 , 1980,
Abstract: Infrared Absorption measurements of oxygen in silicon and germanium were made with IE Fourier Transform Spectrometer at temperatures between 6 K and 300 K in the region of 400-4000cm-1. Resolution was up to 0.5cm-1 when high resolution conditions were adopted.Detection limit and sources of error on oxygen concentration of silicon and germanium determined by infrared absorption measurement at low temperature were identified. Using a 2 cm thick sample, the- lower limit of detectability for oxygen at 20 K is estimated to be 9.6×1014 oxygen atom. cm-3 and 3.0×1014 oxygen atom. cm-3 in silicon and germanium respectively. The oxygen concentration of CZ germanium single crystals with different growth conditions was also studied and these results determined by IE measurements havebeen investigated and discussed at temper-lithium precipitation technique.Temperature-dependent fine structure of 1106 cm-3 absorption band of silicon with different oxygen concentration have been investigated and discussed at temper atures between 6 K and 300 K.
CHARACTERISTICS OF LARGE AREA GERMANIUM PHOTODIODE
大面积锗光电接收器的特性测量

Yang Linbao Chen Ruizhang Chen Qiyu,
杨林宝
,陈瑞璋,陈启玙

电子与信息学报 , 1984,
Abstract: 本文介绍了大面积锗光电接收器的光谱响应、量子效率、频率特性和I-V特性的测量方法。在波长为1.3μm处,响应度为0.47 A/W,量子效率为45%,频率响应为100kHz。在反向偏压为 5V,温度为 12℃时,反向漏电流(以电流密度表示)为 23×10~(-6)A/cm~2(直径为 7.5mm)。在10—60℃变温范围内,测定了接收器的I-V温度特性和暗电流与温度的关系。最后对测试系统和实验现象进行了初步讨论。
Germanium quantum dots formed by oxidation of SiGe alloys
氧化硅层中的锗纳米晶体团簇量子点

Liu Shi-Rong,Huang Wei-Qi,Qin Zhao-Jian,
刘世荣
,黄伟其,秦朝建

物理学报 , 2006,
Abstract: 采用氧化和析出的方法在氧化硅中凝聚生成锗纳米晶体量子点结构. 其形成的锗晶体团簇没有突出的棱角和支晶结构,锗晶体团簇的轮廓较圆混,故可以用球形量子点模型来模拟实际的锗晶体团簇. 对比了在长时间退火氧化条件下和在短时间退火用激光照射氧化条件下所生成的锗纳米晶体结构的PL光谱和对应的锗纳米晶体团簇的尺寸分布. 短时间退火氧化条件下生成的锗纳米晶体较小(3.28—3.96nm),长时间退火用激光照射氧化条件下所生成的锗纳米晶体较大(3.72—4.98nm);其分布结构显示某些尺寸的锗纳米晶体团簇较稳定,适当的氧化条件可以得到尺寸分布范围较窄的锗纳米晶体团簇. 用量子点受限模型计算了锗纳米晶体团簇的能隙结构,用Monte Carlo方法模拟了PL光谱和对应的锗纳米晶体团簇的尺寸分布,分别与实验结果符合较好.
THE TRANSVERSE MAGNETORESISTANCE FOR n-TYPE GERMANIUM IN A STRONG MAGNETIC FIELD
强磁场中n型锗的横向磁阻

LAN SIN-FU,
栾心芙

物理学报 , 1965,
Abstract: 本文就声子散射与电离杂质散射的两种散射机构探讨了半导体n型锗的横向磁阻。在简并强磁场情况下,得出声子散射机构在〈111〉,〈110〉和〈100〉三个方向上锗的横向磁阻的表示式。磁阻的平均值的相对大小(ρt<111>)/ρ0:(ρt<110>)/ρ0:(ρt<100>)/ρ0=1:1.7:1.1,并且磁阻具有振荡形式。在非简并量子极限情况下分别对声子散射和杂质散射得出锗的横向磁
Femtosecond photodeflection spectroscopy in thin monocrystalline plates of germanium
锗薄片内飞秒光偏转波谱技术

Pan Xin-Yu,Chigarev N V,Gong Qi-Huang,
潘新宇
,N.V.Chigarev,龚旗煌

中国物理 B , 2005,
Abstract: A highly sensitive photodeflection spectroscopy technique with femtosecond time resolution has been developed. Using this technique, we have measured accurately the shape of acoustic pulses, which were generated from the ultrafast phonon emission in a germanium plate. Supersonic expansion of photoexcited electron-hole plasma was observed. The characteristic velocity of plasma diffusion was evaluated. It exceeded the longitudinal sound velocity in germanium by a factor of 4.0.
Study on the Rapid Determination of Germanium and Tin by Ion Chromatography
离子色谱法快速连续测定锗和锡的研究

Wang Huitong,Mou Shifen,Sun Qun,
王汇彤
,牟世芬,孙群

色谱 , 1994,
Abstract: 介绍了一种快速测定锗和锡的新方法-离子色谱法,锗在锡在双功能的分离柱上被分离后进行柱后显色反应,然后经可见检测器于520nm处检测,此法具有较高的灵敏度和选择性,整个分析过程仅需5min,样品分析结果令人满意。
Effects of Germanium on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon
锗对重掺硼直拉硅中氧沉淀的影响

Jiang Huihu,Yang Deren,Tian Daxi,Ma Xiangyang,Li Liben,Que Duanlin,
江慧华
,杨德仁,田达晰,马向阳,李立本,阙端麟

半导体学报 , 2005,
Abstract: 通过单步长时间退火(650~1150℃/64h)和低高两步退火(650℃/16h 1000℃/16h和800℃/4~128h 1000℃/16h),研究锗对重掺硼硅(HB-Si)中氧沉淀的影响.实验结果表明,经过退火后,掺锗的重掺硼硅中与氧沉淀相关的体微缺陷密度要远远低于一般的重掺硼硅,这表明锗的掺人抑制了重掺硼硅中氧沉淀的生成,并对相关的机制做了初步探讨.
Fabrication of Germanium Inverse Opal Three-dimensional Photonic Crystal by LPCVD
低压化学气相沉积技术制备锗反蛋白石三维光子晶体

LI Yu-jie,XIE Kai,XU Jing,HAN Yu,TU Sheng-yi,LI Yun-peng,
李宇杰
,谢凯,许静,韩喻,涂圣义,李运鹏

光子学报 , 2009,
Abstract: Monodisperse silica microspheres were assembled into three-dimensional colloidal crystal template with long-ranged order by solvent vaporization convection self-assembly method.Low Pressure Chemical Vapour Deposition(LPCVD) method was used to fill the voids of silica colloidal crystals template with high refractive index material germanium,then silica colloidal crystals template was removed by an acid etching.Thus germanium three-dimensional inverse opal photonic crystal was obtained.The modality,component and structure of the resulted samples were characterized by scanning electron microscopy,X-ray diffraction and UV-VIS-NIR spectroscopy.Results show that germanium of high crystalline quality is homogeneously distributed inside the voids of silica template.The filling fraction of germanium can be controlled by changing the conditions of LPCVD.The samples have optic reflective apex and show the photonic band gap effects.The experiment optic capability is inosculated with the calculated one.
第1页/共100条
每页显示


Home
Copyright © 2008-2017 Open Access Library. All rights reserved.