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 樊绍翥,张凤生,李　烨,姚建刚 北方园艺 , 2010, DOI: 10.11937/bfyy.201023007 Abstract:
 朱明涛 北方园艺 , 2010, DOI: 10.11937/bfyy.201023076 Abstract:
 郑晓君,叶　静,管常东,马海英 北方园艺 , 2010, DOI: 10.11937/bfyy.201019081 Abstract:
 詹启成,王奎,蒋雄辉,魏雪琴,潘登浪 北方园艺 , 2012, Abstract: 采用不同的介质和播种方式，对经人工授粉的白鹤芋种子在不同的光照和温度条件下的萌芽特性进行研究。结果表明白鹤芋种子经不同播种介质和不同包埋方式播种后7~10d均有萌芽，播种在介质泥炭的表面，萌芽率达83.3%；黑暗条件下，种子萌芽率达到96.7%；24℃至温室室温范围内种子萌芽率均达到90%。？
 Physics , 1996, DOI: 10.1103/PhysRevLett.77.5090 Abstract: The (001) surfaces of cubic SiC were investigated with ab-initio molecular dynamics simulations. We show that C-terminated surfaces can have different c(2x2) and p(2x1) reconstructions, depending on preparation conditions and thermal treatment, and we suggest experimental probes to identify the various reconstructed geometries. Furthermore we show that Si-terminated surfaces exhibit a p(2x1) reconstruction at T=0, whereas above room temperature they oscillate between a dimer row and an ideal geometry below 500 K, and sample several patterns including a c(4x2) above 500 K.
 刘申态 地质与勘探 , 2011, Abstract: 根据1颐20万化探Au异常,在琼中岭头地区开展1颐1万土壤地球化学勘探工作。对获得的4813个有效土壤样品进行的Au、Cu、Mo、Hg、Pb等项目的分析测试表明,海南岭头地区Au异常普遍,II级和III级异常面积大,强度高。对硅化、黄铁矿化以及绢英岩化等蚀变岩石样品的Au等元素分析表明,区内西南部抱板群构成了海南岭头地区Au的主要赋矿岩系,230Ma左右琼中岩体的侵位及后期的NE、NW向断裂活动过程中,在岩浆热液和构造应力作用下,Au富集在岩体与抱板群的接触边界及断层带内。海南岭头地区西南部抱板群内、断裂带以及琼中岩体和抱板群的接触部位为有潜力的找矿靶区。
 Physics , 2008, DOI: 10.1002/pssr.200802166 Abstract: We study the mechanism leading to the metallization of the $\beta$-SiC(001) Si-rich surface induced by hydrogen adsorption. We analyze the effects of band bending and demonstrate the existence of a quasi-2D electron gas, which originates from the donation of electrons from adsorbed hydrogen to bulk conduction states. We also provide a simple model that captures the main features of the results of first-principles calculations, and uncovers the basic physics of the process.
 Physics , 2007, DOI: 10.1103/PhysRevLett.89.156101 Abstract: The high lattice mismatched SiC/Si(001) interface was investigated by means of combined classical and ab initio molecular dynamics. Among the several configurations analyzed, a dislocation network pinned at the interface was found to be the most efficient mechanism for strain relief. A detailed description of the dislocation core is given, and the related electronic properties are discussed for the most stable geometry: we found interface states localized in the gap that may be a source of failure of electronic devices.
 Physics , 2007, DOI: 10.1103/PhysRevB.68.195302 Abstract: Using first principles, classical potentials, and elasticity theory, we investigated the structure of a semiconductor/semiconductor interface with a high lattice mismatch, SiC/Si(001). Among several tested possible configurations, a heterostructure with (i) a misfit dislocation network pinned at the interface and (ii) reconstructed dislocation cores with a carbon substoichiometry is found to be the most stable one. The importance of the slab approximation in first-principles calculations is discussed and estimated by combining classical potential techniques and elasticity theory. For the most stable configuration, an estimate of the interface energy is given. Finally, the electronic structure is investigated and discussed in relation with the dislocation array structure. Interface states, localized in the heterostructure gap and located on dislocation cores, are identified.
 物理学报 , 1989, Abstract: 本文考虑最近邻及次近邻相互作用,连续地改变表面相互作用参数αs和βs,研究了Mo(001)表面声子及其软化,得到了声子稳定图,并分析了表面波的振动模式,讨论了表面波的软化与表面再构的关系。
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