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-  2017 

化学水浴法制备ZnS薄膜的结构与性能
The structure and properties of ZnS films prepared by chemical bath deposition

Keywords: 硫化锌,化学水浴法,铜铟镓硒,薄膜太阳电池,缓冲层,
ZnS
,chemical bath deposition (CBD),CIGS,thin film solar cell,buffer layer

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Abstract:

采用化学水浴法制备了ZnS薄膜,并从沉积ZnS薄膜的化学反应原理出发,对其结构和性能进行了综合研究。结果表明:随着沉积时间的增加,ZnS薄膜厚度增加,其光学透过率降低,薄膜的禁带宽度也随之变小,最小值为3.74 eV;而薄膜的粗糙度变化不大,其值在6~9 nm之间。随着反应物浓度的增加,薄膜的光学透过率呈先增加后减小的变化,当反应物浓度过低或过高时,沉积反应都会向同质反应偏移,在薄膜表面生成杂质,导致薄膜不均匀。当沉积时间为120 min,ZnSO4、SC(NH2)2和NH3·H2O的浓度分别为0.03、0.4和4.0 mol/L时,沉积的ZnS薄膜呈均匀致密结构,成分为单一ZnS相,其光学透过率在450 ~ 900 nm波段高于70%

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