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三势垒共振隧穿结构中极大增强的光生空穴共振隧穿

Keywords: 光激发,空穴,共振隧穿,峰谷比,photo-excitation,holes,resonanttunneling,peak-to-valleycurrentratio(PVCR),势垒,共振隧穿结构,增强,光生空穴,STRUCTURE,TUNNELING,thought,quantization,levels,quantumwell,side,hole,depressed,valley,vast,number,high,PVCR,value,current

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Abstract:

研究了电子隧穿出射端嵌入1.2μm厚n型弱掺杂GaAs层的三势垒双阱隧穿结构,观察到了隧穿峰谷比高达36的光生空穴共振隧穿峰.研究证实1.2μm厚n型弱掺杂GaAs层在光照下产生的大量光生空穴以及空穴隧穿出射端的23nm宽的量子阱中量子化的空穴能级对空穴隧穿谷电流的限制作用,是导致高峰谷比的光生空穴隧穿现象的主要原因.

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