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纤锌矿应变GaN柱形量子点中离子受主束缚激子的带间光跃迁

, PP. 385-391

Keywords: 光电子学,柱形量子点,内建电场,离子受主束缚激子,发光波长

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Abstract:

在有效质量近似基础上,考虑强的内建电场效应,变分计算了纤锌矿结构的GaN柱形量子点中带电量为的离子受主束缚激子(A?,X)的发光波长。结果表明,离子受主束缚激子发光波长强烈依赖于量子点的尺寸(高度和半径)、离子受主杂质的位置和垒中Al含量。随着量子点高度、半径及垒中Al含量的增加,离子受主束缚激子发光波长增大。随着离子受主杂质从量子点左边垒中沿z轴方向移至量子点左边界时,发光波长先增大,在量子点的左界面附近达到极大值;随着离子受主杂质在量子点内继续右移,发光波长减小,当杂质位于量子点的右边界附近时光跃迁波长达到极小值;进一步右移离子受主杂质至量子点的右边垒中时,发光波长增大。和自由激子光跃迁波长相比,当离子受主杂质位于量子点中心的左边时,杂质的引入使发光波长增大,当离子受主杂质位于量子点中心的右边时,杂质的引入使发光波长减小。

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