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不同特征频率高频硅双极晶体管静电放电机器模型敏感特性

DOI: 10.13336/j.1003-6520.hve.2015.05.029, PP. 1631-1636

Keywords: 硅双极晶体管,静电放电,机器模型,特征频率,基区宽度,电流增益

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Abstract:

为了发掘不同特征频率的高频硅双极晶体管在静电放电(ESD)机器模型(MM)作用下敏感特性的相关规律,选取了12种典型的高频硅双极晶体管进行静电放电效应试验。试验结果表明由于发射极E基极B之间的PN结(EB结)基区宽度比集电极C和基极B之间的PN结(CB结)窄,因而反偏注入MMESD时,高频硅硅双极晶体管(BJT)的ESD最敏感端对是EB反偏结;当特征频率fT=600MHz时,失效电压最大,并且随着fT的升高或降低,器件的失效电压逐渐减小;随着注入电压的升高,当fT≤600MHz时,共发射极电流增益hFE突变至失效,当fT>600MHz时,hFE渐变至失效。该研究结果对于分析高频硅BJT在ESD作用下的敏感特性具有指导意义。

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