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Fabrication, Characterization and Optical Properties of CuIn3Se5 Bulk Compounds

DOI: 10.4236/wjcmp.2015.53021, PP. 201-208

Keywords: Chalcopyrite, Photovoltaic, Photoluminescence, Optical Response, X-Ray Diffraction

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Abstract:

The present work prepared the CuIn3Se5 ingots by using a horizontal Bridgman method and investigated the Energy Dispersive Spectrometry (EDS) and X-Ray Diffraction (XRD) to calculate the compositions of the ingots. Photoluminescence was used to check their optical properties. It was found that CuIn3Se5 had either a Stanite structure, an Ordered Defect Chalcopyrite (ODC) structure, or an Ordered Vacancy Chalcopyrite (OVC) structure. The gap energy obtained by Photoluminescence (PL) for the different samples is 1.23 eV. Studying the variation of the gap as a function of the temperature shows that the transition is a D-A type.

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