全部 标题 作者
关键词 摘要


Dichroic Electro-Optical Behavior of Rhenium Sulfide Layered Crystal

DOI: 10.4236/csta.2013.22009, PP. 65-69

Keywords: Triclinic Crystals, Optical Materials, Polarization-Sensitive Devices

Full-Text   Cite this paper   Add to My Lib

Abstract:

Dichroic behaviors of layered ReS2 have been characterized using angular dependent polarizedabsorption and resistivity measurements in the van der Waal plane. The angular dependent optical and electrical measurements are carried out with angles ranging from θ= 0°(E || b) to θ= 90°(E ^b) with respect to the layer crystal’s b-axis. The angular de pendence of polarized energy gaps of ReS2 shows a sinusoidal variation of energies from ~1.341 eV (E ||b to ~1.391 eV (E ^ b). The experimental evidence of polarized energy gap leaves ReS2 apotential usage for fabrication of a polarized optical switch suitable for polarized optical communication in nearinfrared (NIR) region. Angular dependence of resistivities of ReS2 in the vander Waal plane has also been evaluated. The relationship of inplane resistivities shows a sinusoidallike variation from θ= 0°(E ||b) to 90°(E ^ b) and repeated periodically to 360

References

[1]  E. Hecht, “Optics,” 4th Editon, Addison Wesley, San Francisco, 2002, p. 333.
[2]  C. H. Liang, K. K. Tiong, Y. S. Huang, D. Dumcenco and C. H. Ho, “InPlane Anisotropic Electrical and Optical Properties of GoldDoped Rhenium Disulphide,” Journal of Materials Science: Materials in Electronics, Vol. 20, No. 1, 2009, pp. S476S479. doi:10.1007/s1085400896852
[3]  J. C. Wildervanck and F. Jellinek, “The Dichalcogenides of Technetium and Rhenium,” Journal of the Less Com mon Metals, Vol. 24, No. 1, 1971, pp. 7381. doi:10.1016/00225088(71)901688
[4]  H. J. Lamfers, A. Meetsma, G. A. Wiegers, and J. L. de Boer, “The Crystal Structure of Some Rhenium and Technetium Dichalcogenides,” Journal of Alloys and Compounds, Vol. 241, 1996, pp. 3439.
[5]  C. H. Ho, P. C. Liao, Y. S. Huang, T. R. Yang and K. K. Tiong, “Optical Absorption of ReS2 and ReSe2 Single Crystals,” Journal of Applied Physics, Vol. 81, No. 9, 1997, pp. 63806383. doi:10.1063/1.365357
[6]  K. Friemelt, M.Ch. LuxSteiner and E. Bucher, “Optical Properties of the Layered TransitionMetalDichalco genide ReS2: Anisotropy in the van der Waals Plane,” Journal of Applied Physics, Vol. 74, No. 8, 1993, pp. 52665268. doi:10.1063/1.354268
[7]  C. H. Ho, “Single Crystal Growth and Characterization of Copper Aluminum Indium Disulfide Chalcopyrites,” Journal of Crystal Growth, Vol. 317, No. 1, 2011, pp. 5259. doi:10.1016/j.jcrysgro.2011.01.008
[8]  C. H. Ho, Y. S. Huang, P. C. Liao and K. K. Tiong, “Crystal Structure and BandEdge Transitions of ReS2xSex Layered Compounds,” Journal of Physics and Chemistry of Solids, Vol. 60, No. 11, 1999, pp. 1797 1804. doi:10.1016/S00223697(99)002012
[9]  B. A. Parkinson, J. Ren and M.H. Whangbo, “Relation ship of STM and AFM Images to Local Density of States in Valence and Conduction Bands of ReS2,” Journal of the American Chemical Society, Vol. 113, No. 21, 1991, pp. 78337837. doi:10.1021/ja00021a001
[10]  J. I. Pankove, “Optical Processes in Semiconductors,” Dover, New York, 1975.
[11]  G. A. Medvedkin, Yu. V. Rud and M. A. Tairov, “Photo electric Anisotropy of IIIVV2 Ternary Semiconductors,” Physica Status Solidi (a), Vol. 115, No. 1, 1989, pp. 11 50. doi:10.1002/pssa.2211150102
[12]  H. H. Wieder, “Laboratory Notes on Electrical and Gal vanomagnetic Measurements,” Elsevier, Amsterdam, 1979.

Full-Text

comments powered by Disqus