This paper describes a study of the RHEED intensity change against temperaturein case of GaAs and InAs surfaces. RHEED as a technique is a widely used monitoringmethod for observing molecular-beam-epitaxial (MBE) growth. The reconstruction andother changes of the surface can be investigated by observing the RHEED pattern. Both thestatic and the dynamic RHEED-s are very complex phenomena, but these effects can beused as versatile tools for in-situ monitoring of the growth of the epitaxial layer, in spite ofthe fact that we do not know much about the details of its nature. Our observations showedthat the specular beam intensity of RHEED had changed with the change of the surfacetemperature. We investigated the changes of the GaAs and InAs (001) surfaces by using thiseffect. The change in intensity follows the observed surface reconstruction. This change inthe RHEED intensity against temperature shows hysteretic properties, with a differentcharacter for each material. So far, the explanations for these phenomena were different inboth cases. Here, we explain these hysteretic phenomena in general terms with the T(x)hyperbolic model for coupled hysteretic systems, which is applicable to both materials.Experimental results presented in the paper are in good agreement with the modelpredictions.