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Solution of Process Antenna Effect in Deep-Submicron Design
深亚微米设计中天线效应的消除

Keywords: PAE,plasma,gate oxide,reliability
PAE效应
,等离子,栅氧化层,可靠性

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Abstract:

PAE (process antenna effect) is a phenomenon of plasma induced gate oxide degradation.It directly affects manufacturability of VLSI circuits,especially in deep submicron technology using high density plasma processes.Base on analysis of PAE,several estimating algorithms and solutions are provided.And these methods are adopted in the Godson-I CPU's back-end design successfully.

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