%0 Journal Article
%T Characteristics of Diamond-Like Carbon Thin Film Semiconductor for Photovoltaic Application
%A K. M. A. Hussain
%A T. Faruqe
%A J. L. Sullivan
%J Open Access Library Journal
%V 1
%N 4
%P 1-7
%@ 2333-9721
%D 2014
%I Open Access Library
%R 10.4236/oalib.1100616
%X <p class="MsoNormal">
	<span lang="EN-US">Diamond-Like Carbon (DLC) thin film
semiconductors were produced by Radio Frequency Plasma Enhanced Chemical Vapour
Deposition (RF-PECVD) method and characterized by nanoindentation to
investigate its mechanical properties for protective coating applications. The
XRD analysis showed that the films were hydrogenated amorphous carbon (a-C:H)
nature. The thickness of the films was measured by Ellipsometry and
Profilometry. The thickness variation with deposition rate followed a linear
relationship within the various deposition parameters showed a good homogeneity
formed of DLC films. The hardness value linearly varied with RF power at 30
mTorr showed an optimum pressure to form a quality DLC thin film. The optimum
RF power and CM pressure was 150 watt and 30 mTorr showed the thin film
hardness 18.73 ¡À 2.51 GPa and reduced modulus 171.04 ¡À 11.13 GPa and the films
were investigated as hard hydrogenated amorphous carbon (a-C:H) structure. The
high hardness value and the deposition parameters showed that the deposition
method of RF-PECVD was a controlled deposition process especially for a-C:H DLC
thin film deposition. The thickness effects on hardness of the film implied
that the optimum deposition condition was an important aspect to get quality
DLC films for protective coating application.</span>
</p>
%K Diamond-Like Carbon
%K Nano-Indentation
%K X-Ray Photoelectron Spectroscopy
%U http://www.oalib.com/paper/3065218