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Structural, Electrical and Optical Characteristics of Zn100–xCdxO Thin Films

DOI: 10.4236/oalib.1104687, PP. 1-12

Subject Areas: Experimental Physics

Keywords: Zn100–xCdxO, Zinc

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Abstract

Thin films of Zn100-xCdxO with x = 0, 2, 4, 6 and 8 at% were deposited by electron beam evaporation technique on glass substrates. The structural, optical and electrical properties of Zn100-xCdxO films with x = 4 at% have been investigated as a function of annealing temperature. Only zinc and cadmium appeared in the as-deposited films, by annealing their oxides found to exist. It was observed that the optical properties, such as transmittance, reflectance, optical band gap, and refractive index of Zn100-xCdx, were strongly affected by annealing temperature. Other parameters named free carrier concentration, electrical resistivity of the films were studied as a function of annealing temperature for 4 at% CdO content. The figure indicates that the best value of annealing temperature is at 450℃.

Cite this paper

Alkhammash, H. , El-Ghanny, H. A. and El-Raheem, M. M. A. (2018). Structural, Electrical and Optical Characteristics of Zn100–xCdxO Thin Films. Open Access Library Journal, 5, e4687. doi: http://dx.doi.org/10.4236/oalib.1104687.

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